FDP5N50F Datasheet PDF - Fairchild Semiconductor
Part Number | FDP5N50F | |
Description | N-Channel MOSFET | |
Manufacturers | Fairchild Semiconductor | |
Logo | ||
There is a preview and FDP5N50F download ( pdf file ) link at the bottom of this page. Total 10 Pages |
Preview 1 page No Preview Available ! FDP5N50F / FDPF5N50FT
N-Channel MOSFET, FRFET
500V, 4.5A, 1.55Ω
Features
• RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A
• Low gate charge ( Typ. 11nC)
• Low Crss ( Typ. 5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
December 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power factor-
correction.
D
G
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP5N50F FDPF5N50FT
500
±30
4.5 4.5*
2.7 2.7*
18 18*
233
4.5
8.5
4.5
85 28
0.67 0.22
-55 to +150
300
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP5N50F
1.4
0.5
62.5
FDPF5N50FT
4.5
-
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDP5N50F / FDPF5N50FT Rev. A1
1
www.fairchildsemi.com
http://www.Datasheet4U.com
|
|
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDPF5N50FT
10
0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
0.01 Single pulse
0.005
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 4.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
100
101
102
103
Rectangular Pulse Duration [sec]
FDP5N50F / FDPF5N50FT Rev. A1
5
www.fairchildsemi.com
http://www.Datasheet4U.com
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FDP5N50F electronic component. |
Information | Total 10 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ FDP5N50F.PDF Datasheet ] |
Share Link :
Electronic Components Distributor
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
Part Number | Description | MFRS |
FDP5N50 | The function is N-Channel MOSFET. Fairchild Semiconductor | |
FDP5N50F | The function is N-Channel MOSFET. Fairchild Semiconductor | |
FDP5N50NZ | The function is N-Channel MOSFET. Fairchild Semiconductor | |
Semiconductors commonly used in industry:
1N4148 |  
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
FDP5
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA |