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What is FDP5N50F?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "N-Channel MOSFET".


FDP5N50F Datasheet PDF - Fairchild Semiconductor

Part Number FDP5N50F
Description N-Channel MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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FDP5N50F / FDPF5N50FT
N-Channel MOSFET, FRFET
500V, 4.5A, 1.55
Features
• RDS(on) = 1.25( Typ.)@ VGS = 10V, ID = 2.25A
• Low gate charge ( Typ. 11nC)
• Low Crss ( Typ. 5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
December 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power factor-
correction.
D
G
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP5N50F FDPF5N50FT
500
±30
4.5 4.5*
2.7 2.7*
18 18*
233
4.5
8.5
4.5
85 28
0.67 0.22
-55 to +150
300
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP5N50F
1.4
0.5
62.5
FDPF5N50FT
4.5
-
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDP5N50F / FDPF5N50FT Rev. A1
1
www.fairchildsemi.com
http://www.Datasheet4U.com

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FDP5N50F equivalent
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDPF5N50FT
10
0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
0.01 Single pulse
0.005
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 4.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
100
101
102
103
Rectangular Pulse Duration [sec]
FDP5N50F / FDPF5N50FT Rev. A1
5
www.fairchildsemi.com
http://www.Datasheet4U.com


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