Si7905DN Datasheet PDF - VISHAY
| Part Number | Si7905DN | |
| Description | Dual P-Channel 40 V (D-S) MOSFET | |
| Manufacturers | VISHAY | |
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Dual P-Channel 40 V (D-S) MOSFET
Si7905DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.060 at VGS = - 10 V
- 40
0.089 at VGS = - 4.5V
ID (A)
- 6e
- 5f
Qg (Typ.)
11 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 1.07 mm
Profile
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
PowerPAK 1212-8
APPLICATIONS
• Load Switch
S1
S2
3.30 mm
D1
8
D1
7
D2
6 D2
5
S1
1
G1
2
3.30 mm
S2
3 G2
4
Bottom View
Ordering Information: Si7905DN-T1-E3 (Lead (Pb)-free)
Si7905DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
G1 G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
- 40
± 20
- 6e
-5
- 5a, b
- 4a, b
- 20
- 6e
- 2a, b
- 15
11.25
20.8
13.3
2.5a, b
1.6a, b
- 55 to 150
260
V
A
mJ
W
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
f. TC = 25 °C.
Document Number: 69920
www.vishay.com
S11-2187-Rev. C, 07-Nov-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com
|
| |
 
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
16
Si7905DN
Vishay Siliconix
12
8
Package Limited
4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
25 1.6
20
1.2
15
0.8
10
0.4
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69920
www.vishay.com
S11-2187-Rev. C, 07-Nov-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com
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| Information | Total 13 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ Si7905DN.PDF Datasheet ] | |
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