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PDF SW6N90 Data sheet ( Hoja de datos )
| Número de pieza | SW6N90 | |
| Descripción | N-channel TO-262 MOSFET | |
| Fabricantes | SEMIPOWER | |
| Logotipo |  |
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SAMWIN
SW6N90
N-channel TO-262 MOSFET
Features
■ High ruggedness
■ RDS(ON) (Max 2.3 Ω)@VGS=10V
■ Gate Charge (Typical 40nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-262
1
2
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or full bridge resonant topology
like a electronic ballast, and also low power switching mode power appliances.
BVDSS : 900V
ID : 6.0A
RDS(ON) : 2.3ohm
2
1
3
Order Codes
Item
1
Sales Type
SW U 6N90
Marking
SW6N90
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Package
TO-262
Packaging
TUBE
Value
900
6.0*
3.78*
24
±30
550
150
5
231
1.85
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Thermal characteristics
Symbol
Parameter
Rthjc
Rthcs
Rthja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
0.54
-
65
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
1/5
http://www.Datasheet4U.com
1 page  
SAMWIN
Fig. 11. Unclamped Inductive switching test circuit & waveform
SW6N90
Fig. 12. Peak diode recovery dv/dt test circuit & waveform
DUT + VDS
VGS (DRIVER)
10VGS
-
IS
L
VDS
RG
Same type
as DUT
*. dv/dt controlled by RG
*. Is controlled by pulse period
IS (DUT)
VDD
VDS (DUT)
10V
di/dt
IRM
Diode reverse current
Diode recovery dv/dt
VF VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
5/5
http://www.Datasheet4U.com
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