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PDF IRF6614PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6614PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l RoHS Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses and Switching Losses
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
PD -97090
IRF6614PbF
IRF6614TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
40V max ±20V max 5.9mΩ@ 10V 7.1mΩ@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
ST
DirectFET ISOMETRIC
SQ SX ST
MQ MX MT
Description
The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-
cesses. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best
thermal resistance by 80%.
The IRF6614PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest
generation of processors operating at higher frequencies. The IRF6614PbF has been optimized for parameters that are critical in
synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET
socket.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
40 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
20
16
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
ID = 12.7A
12
10 ID= 10.2A
8
±20
12.7
10.1
55
102
22
10.2
VDS= 32V
VDS= 20V
A
mJ
A
12 TJ = 125°C 6
8 TJ = 25°C
4
2
4
2.0 4.0 6.0 8.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
0
0 10 20 30 40 50
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.43mH, RG = 25Ω, IAS = 10.2A.
1
5/5/06
Free Datasheet http://www.Datasheet4U.com
1 page  
100.0
10.0
1.0
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
0.1
0.2 0.6 1.0 1.4 1.8 2.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60
50
40
30
20
10
0
25
50 75 100 125
TJ , Junction Temperature (°C)
150
Fig 12. Maximum Drain Current vs. Case Temperature
100
80
60
IRF6614PbF
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10
1msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.01
0.10
10msec
1.00
10.00
100.00
VDS , Drain-toSource Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
2.0
ID = 250µA
1.5
1.0
0.5
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 4.3A
6.4A
BOTTOM 10.2A
40
20
www.irf.com
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
5
Free Datasheet http://www.Datasheet4U.com
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| PDF Descargar | [ Datasheet IRF6614PBF.PDF ] | |
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