10NM60N Datasheet PDF - STMicroelectronics
Part Number | 10NM60N | |
Description | STD10NM60N | |
Manufacturers | STMicroelectronics | |
Logo | ||
There is a preview and 10NM60N download ( pdf file ) link at the bottom of this page. Total 17 Pages |
Preview 1 page No Preview Available ! STD10NM60N, STF10NM60N
STP10NM60N, STU10NM60N
N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK
MDmesh™ II Power MOSFET
Features
Order codes
VDSS
@TJmax
STD10NM60N
RDS(on)
max.
STF10NM60N
STP10NM60N
650 V
< 0.55 Ω
STU10NM60N
ID
10 A
Pw
70 W
25 W
70 W
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are N-channel 600 V Power
MOSFET realized using the second generation of
MDmesh™ technology. It applies the benefits of
the multiple drain process to STMicroelectronics’
well-known PowerMESH™ horizontal layout
structure. The resulting product offers improved
on-resistance, low gate charge, high dv/dt
capability and excellent avalanche characteristics.
3
2
1
TO-220
3
2
1
TO-220FP
IPAK
3
2
1
3
1
DPAK
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
Marking
10NM60N
10NM60N
10NM60N
10NM60N
Package
DPAK
TO-220FP
TO-220
IPAK
!-V
Packaging
Tape and reel
Tube
Tube
Tube
November 2010
Doc ID 15764 Rev 5
1/17
www.st.com
17
Free Datasheet http://www.datasheet-pdf.com/
|
|
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 300 V, ID = 4 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16)
Min. Typ. Max Unit
10 ns
12 ns
--
32 ns
15 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 8 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 18)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max Unit
8A
-
32 A
- 1.3 V
250
- 2.12
17
ns
µC
A
315
- 2.6
16.5
ns
µC
A
Doc ID 15764 Rev 5
5/17
Free Datasheet http://www.datasheet-pdf.com/
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 10NM60N electronic component. |
Information | Total 17 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Product Image and Detail view | 1. 10A, N-Ch, MOSFET - ST [ Learn More ] | |
Download | [ 10NM60N.PDF Datasheet ] |
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