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What is 10NM60N?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "STD10NM60N".


10NM60N Datasheet PDF - STMicroelectronics

Part Number 10NM60N
Description STD10NM60N
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STD10NM60N, STF10NM60N
STP10NM60N, STU10NM60N
N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK
MDmesh™ II Power MOSFET
Features
Order codes
VDSS
@TJmax
STD10NM60N
RDS(on)
max.
STF10NM60N
STP10NM60N
650 V
< 0.55 Ω
STU10NM60N
ID
10 A
Pw
70 W
25 W
70 W
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
These devices are N-channel 600 V Power
MOSFET realized using the second generation of
MDmeshtechnology. It applies the benefits of
the multiple drain process to STMicroelectronics’
well-known PowerMESHhorizontal layout
structure. The resulting product offers improved
on-resistance, low gate charge, high dv/dt
capability and excellent avalanche characteristics.
3
2
1
TO-220
3
2
1
TO-220FP
IPAK
3
2
1
3
1
DPAK
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
Marking
10NM60N
10NM60N
10NM60N
10NM60N
Package
DPAK
TO-220FP
TO-220
IPAK
!-V
Packaging
Tape and reel
Tube
Tube
Tube
November 2010
Doc ID 15764 Rev 5
1/17
www.st.com
17
Free Datasheet http://www.datasheet-pdf.com/

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10NM60N equivalent
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 300 V, ID = 4 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16)
Min. Typ. Max Unit
10 ns
12 ns
--
32 ns
15 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 8 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 18)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max Unit
8A
-
32 A
- 1.3 V
250
- 2.12
17
ns
µC
A
315
- 2.6
16.5
ns
µC
A
Doc ID 15764 Rev 5
5/17
Free Datasheet http://www.datasheet-pdf.com/


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10NM60N mosfet datasheet


1. 10A, N-Ch, MOSFET - ST

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