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Datasheet HGTG24N60D1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HGTG24N60D1 | 24A/ 600V N-Channel IGBT HGTG24N60D1
May 1995
24A, 600V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL)
Features
• 24A, 600V • Latch Free Operation • Typical Fall Time <500ns • High Input Impedance • Low Conduction Loss
Description
The IGBT is a MOS gated high volt |  Intersil Corporation | igbt |
| 2 | HGTG24N60D1D | 24A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode HGTG24N60D1D
April 1995
24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL)
Features
• 24A, 600V • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • | Intersil Corporation | igbt |
HGT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HGT1N30N60A4D | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGT1N30N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and th  Fairchild Semiconductor igbt | | |
| 2 | HGT1N40N60A4 | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGT1N40N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the Fairchild Semiconductor igbt | | |
| 3 | HGT1N40N60A4D | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGT1N40N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the Fairchild Semiconductor igbt | | |
| 4 | HGT1S10N120BNS | 35A/ 1200V/ NPT Series N-Channel IGBT HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Data Sheet August 2002
35A, 1200V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best featur Fairchild Semiconductor igbt | | |
| 5 | HGT1S10N120BNS | 35A/ 1200V/ NPT Series N-Channel IGBT HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Data Sheet January 2000 File Number 4575.2
35A, 1200V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs com Intersil Corporation igbt | | |
| 6 | HGT1S11N120CNS | 43A/ 1200V/ NPT Series N-Channel IGBT HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS
Data Sheet December 2001
43A, 1200V, NPT Series N-Channel IGBT
The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best fea Fairchild Semiconductor igbt | | |
| 7 | HGT1S11N120CNS | 43A/ 1200V/ NPT Series N-Channel IGBT HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS
Data Sheet January 2000 File Number 4577.2
43A, 1200V, NPT Series N-Channel IGBT
The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs co Intersil Corporation igbt | | |
| 8 | HGT1S12N60A4DS | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. Thes Fairchild Semiconductor igbt | | |
| 9 | HGT1S12N60A4DS | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Data Sheet November 1999 File Number 4697.3
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipola Intersil Corporation igbt | |
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