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What is HGTG18N120BND?

This electronic component, produced by the manufacturer "Intersil Corporation", performs the same function as "54A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode".


HGTG18N120BND Datasheet PDF - Intersil Corporation

Part Number HGTG18N120BND
Description 54A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Manufacturers Intersil Corporation 
Logo Intersil Corporation Logo 


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Data Sheet
HGTG18N120BND
January 2000 File Number 4555.1
54A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG18N120BND is a Non-Punch Through (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49304.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG18N120BND
TO-247
18N120BND
NOTE: When ordering, use the entire part number.
Symbol
Features
• 54A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

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HGTG18N120BND equivalent
HGTG18N120BND
Typical Performance Curves Unless Otherwise Specified (Continued)
40 RG = 3, L = 1mH, VCE = 960V
35 TJ = 25oC, TJ = 150oC, VGE = 12V
30
25
20
TJ = 25oC, TJ = 150oC, VGE = 15V
15
5 10 15 20 25 30 35 40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
350
RG = 3, L = 1mH, VCE = 960V
300
VGE = 12V, VGE = 15V, TJ = 150oC
250
200
150
100
5
VGE = 12V, VGE = 15V, TJ = 25oC
10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
120
RG = 3, L = 1mH, VCE = 960V
100 TJ = 25oC, TJ = 150oC, VGE = 12V
80
60
40
20
0
5
TJ = 25oC OR TJ = 150oC, VGE = 15V
10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
250
RG = 3, L = 1mH, VCE = 960V
225
200
175 TJ = 150oC, VGE = 12V OR 15V
150
125
100
75 TJ = 25oC, VGE = 12V OR 15V
50
25
5 10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
40
200
DUTY CYCLE < 0.5%, VCE = 20V
PULSE DURATION = 250µs
150
100
50
0
6
TC = 25oC
TC = 150oC
TC = -55oC
7 8 9 10 11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
15
FIGURE 13. TRANSFER CHARACTERISTIC
20 IG(REF) = 2mA, RL = 33.3, TC = 25oC
15
VCE = 1200V VCE = 800V
10
VCE = 400V
5
0
0 50 100 150
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
200
5


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Featured Datasheets

Part NumberDescriptionMFRS
HGTG18N120BNThe function is 54A/ 1200V/ NPT Series N-Channel IGBT. Fairchild SemiconductorFairchild Semiconductor
HGTG18N120BNThe function is 54A/ 1200V/ NPT Series N-Channel IGBT. Intersil CorporationIntersil Corporation
HGTG18N120BNDThe function is 54A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode. Fairchild SemiconductorFairchild Semiconductor

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