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What is HGTG10N120BND?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "35A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode".


HGTG10N120BND Datasheet PDF - Fairchild Semiconductor

Part Number HGTG10N120BND
Description 35A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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Data Sheet
HGTG10N120BND
December 2001
35A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG10N120BND is a Non-Punch Through (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor. The IGBT used
is the development type TA49290. The Diode used is the
development type TA49189.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49302.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG10N120BND
TO-247
10N120BND
NOTE: When ordering, use the entire part number.
Features
• 35A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
Symbol
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG10N120BND Rev. B

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HGTG10N120BND equivalent
HGTG10N120BND
Typical Performance Curves Unless Otherwise Specified (Continued)
40
RG = 10, L = 2mH, VCE = 960V
TJ = 25oC, TJ = 150oC, VGE = 12V
35
30
50
RG = 10, L = 2mH, VCE = 960V
40 TJ = 25oC, TJ = 150oC, VGE = 12V
30
25 20
20
15
0
TJ = 25oC, TJ = 150oC, VGE = 15V
5 10 15 20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
10
TJ = 25oC OR TJ = 150oC, VGE = 15V
0
0 5 10 15 20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
400
RG = 10, L = 2mH, VCE = 960V
350
300 VGE = 12V, VGE = 15V, TJ = 150oC
250
200
150
100
0
VGE = 12V, VGE = 15V, TJ = 25oC
5 10 15
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
300
RG = 10, L = 2mH, VCE = 960V
250
200
TJ = 150oC, VGE = 12V OR 15V
150
100
50
0
TJ = 25oC, VGE = 12V OR 15V
5 10 15
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
20
100
DUTY CYCLE <0.5%, VCE = 20V
PULSE DURATION = 250µs
80
60
40
20
07
TC = 25oC
TC = 150oC
TC = -55oC
8 9 10 11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
15
FIGURE 13. TRANSFER CHARACTERISTIC
©2001 Fairchild Semiconductor Corporation
20
IG (REF) = 1mA, RL = 60, TC = 25oC
15
VCE = 1200V VCE = 800V
10
VCE = 400V
5
0
0 20 40 60 80 100
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
120
HGTG10N120BND Rev. B


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Featured Datasheets

Part NumberDescriptionMFRS
HGTG10N120BNThe function is 35A/ 1200V/ NPT Series N-Channel IGBT. Fairchild SemiconductorFairchild Semiconductor
HGTG10N120BNThe function is 35A/ 1200V/ NPT Series N-Channel IGBT. Intersil CorporationIntersil Corporation
HGTG10N120BNDThe function is 35A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode. Fairchild SemiconductorFairchild Semiconductor

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