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Datasheet 10NK80Z Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 10NK80Z | STP10NK80Z STP10NK80Z - STP10NK80ZFP STW10NK80Z
N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET
TYPE STP10NK80Z STP10NK80ZFP STW10NK80Z
s s s s s s
VDSS 800 V 800 V 800 V
RDS(on) < 0.90 Ω < 0.90 Ω < 0.90 Ω
ID 9A 9A 9A
Pw 160 W 40 W 160 W
3 1 2
TYPICAL RD |  STMicroelectronics | data |
10N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 10N03L | IPP10N03L IPP10N03L IPB10N03L OptiMOS® Buck converter series
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
30 8.9 73
P- TO220 -3-1
V mΩ A
• Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM)
• Superior thermal resistance  Infineon Technologies AG data | | |
| 2 | 10N120BND | HGTG10N120BND Data Sheet
HGTG10N120BND
December 2001
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipol  Fairchild Semiconductor data | | |
| 3 | 10N15 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
10N15
Preliminary
10A, 150V, 0.3Ω, N-CHANNEL POWER MOSFETS
DESCRIPTION
The UTC 10N15 is an N-channel enhancement mode silicon-gate power field effect transistors, it uses UTC’s advanced technology to provide the customers with high breakdown voltage etc.
The  Unisonic Technologies mosfet | | |
| 4 | 10N20 | FQB10N20 www.datasheet4u.com
!
"
Fairchild Semiconductor data | | |
| 5 | 10N20C | FQP10N20C
FQP10N20C/FQPF10N20C
QFET
FQP10N20C/FQPF10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially ta Fairchild Semiconductor data | | |
| 6 | 10N30 | 300V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 10N30
Preliminary Power MOSFET
10A, 300V N-CHANNEL POWER MOSFET
DESCRIPTION
1
The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a Unisonic Technologies mosfet | | |
| 7 | 10N361K | JVR10N361K METAL OXIDE VARISTOR 10mm Disc
Maximum Allowable Voltage Part Number Acrms JVR10N180M87orr JVR10N220L87orr JVR10N270K87orr JVR10N330K87orr JVR10N390K87orr JVR10N470K87orr JVR10N560K87orr JVR10N680K87orr JVR10N820K87orr JVR10N101K87orr JVR10N121K87orr JVR10N151K87orr JVR10N181K87orr JVR10N201K87orr J  RFE international data | |
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