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Número de pieza | TSF20H100C | |
Descripción | (TSF20H100C - TSF20H150C) Trench MOS Barrier Schottky Rectifier | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSF20H100C (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! TSF20H100C thru TSF20H150C
Taiwan Semiconductor
Trench MOS Barrier Schottky Rectifier
FEATURES
- Patented Trench MOS Barrier Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Lower power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
ITO-220AB
MECHANICAL DATA
Case : ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Terminal:Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity : As marked
Mounting torque : 5 in-lbs. max.
Weight:1.7 gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (Rated VR)
SYMBOL TSF20H100C TSF20H120C TSF20H150C UNIT
VRRM
100
120
150 V
IF(AV)
20
10 A
IFSM 110 A
dV/dt
10000
V/μs
Isolation voltage from terminal to heatsink t = 1 min
VAC
1500
V
Breakdown voltage ( IR =1.0mA, Ta =25°C )
Instantaneous forward voltage per diode
( Note1 )
IF = 5A
IF = 10A
IF = 5A
IF = 10A
Instantaneous reverse current per diode at rated
reverse voltage
Typical thermal resistance per diode
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with Pulse Width=300us, 1% Duty Cycle
VBR
VF
VF
IR
RθjC
TJ
TSTG
100
Typ. Max.
0.64 -
0.74 0.81
0.55 -
0.63 0.70
- 200
1.5 10
2.5
120
Typ. Max
0.68 -
0.78 0.87
0.56 -
0.63 0.69
- 250
5 15
4.9
- 55 to + 150
- 55 to + 150
150
Typ. Max.
0.73 -
0.81 1.10
0.59 -
0.67 0.73
- 150
3 10
3.8
V
V
μA
mA
OC/W
OC
OC
Document Number:DS_DS_D1401006
Version:D14
Free Datasheet http://www.datasheet4u.com/
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet TSF20H100C.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSF20H100C | (TSF20H100C - TSF20H150C) Trench MOS Barrier Schottky Rectifier | Taiwan Semiconductor |
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