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PDF MJB5742T4G Data sheet ( Hoja de datos )
| Número de pieza | MJB5742T4G | |
| Descripción | NPN Silicon Power Darlington Transistors | |
| Fabricantes | ON Semiconductor | |
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MJB5742T4G
NPN Silicon Power
Darlington Transistors
The Darlington transistors are designed for high−voltage power
switching in inductive circuits.
Features
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Small Engine Ignition
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
http://onsemi.com
POWER DARLINGTON
TRANSISTORS
8 AMPERES, 400 VOLTS
100 WATTS
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ TA = 25_C
Derate above 25°C
Symbol
VCEO(sus)
VCEV
VEB
IC
ICM
IB
IBM
PD
Value
400
800
8
8
16
2.5
5
2
0.016
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
Total Device Dissipation @ TC = 25_C PD 100 W
Derate above 25°C
0.8 W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150 _C
THERMAL CHARACTERISTICS
Characteristics
Symbol Max Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
RqJC
RqJA
TL
1.25 _C/W
62.5 _C/W
275 _C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
© Semiconductor Components Industries, LLC, 2011
June, 2011 − Rev. 2
1
≈ 100 ≈ 50
COLLECTOR 2,4
BASE
1
EMITTER 3
MARKING
DIAGRAM
D2PAK
CASE 418B
STYLE 1
B5742G
AYWW
B5742
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
MJB5742T4G
D2PAK
800 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MJB5742/D
Free Datasheet http://www.datasheet4u.com/
1 page  
MJB5742T4G
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
REVERSE BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 6 may be found at
any case temperature by using the appropriate curve on
Figure 1.
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current condition allowable
during reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives the complete RBSOA
characteristics.
The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.
16
10
8
100 ms
3
10 ms
5 ms
1
0.5
0.3
BONDING WIRE LIMIT
THERMAL LIMIT
dc
1 ms
(SINGLE PULSE)
0.1 SECOND BREAKDOWN LIMIT
0.05 CURVES APPLY BELOW RATED VCEO
0.02
5
10 20
50
MJB5742
100 200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
400
Figure 6. Forward Bias Safe Operating Area
16
14
12
10
8
6
VBE(off) ≤ 5 V
TJ = 100°C
4
2
0
0 100 200 300 400 500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Reverse Bias Safe Operating Area
RESISTIVE SWITCHING PERFORMANCE
1 tr
0.7
0.5
0.3
0.2 td
0.1
0.07
0.05
VCC = 250 V
IB1 = IB2
IC/IB = 20
0.03
0.02
0.2 0.3
0.5 0.7 1
2 3 5 7 10
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Turn−On Time
10
7 ts
5
3
2
1
0.7
0.5
0.3
0.2
0.2 0.3
VCC = 250 V
IB1 = IB2
tf IC/IB = 20
0.5 0.7 1
2 3 5 7 10
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Turn−Off Time
http://onsemi.com
5
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