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PDF UBA2013T Data sheet ( Hoja de datos )
| Número de pieza | UBA2013T | |
| Descripción | HB driver IC | |
| Fabricantes | Philips | |
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UBA2013/L3
HB driver IC with PFC for fluorescent rings
Rev. 00.01 — 23 February 2007
Preliminary data sheet
1. General description
The UBA2013/L3 is a high voltage IC intended to drive and control fluorescent lamps. The
IC can handle both cold and warm ignition of the lamp. It contains a TON-controlled PFC
function, a half bridge controller circuit with level shifter and an internal bootstrap diode to
drive an external half bridge. UBA2013/L3 also offers a functionality to properly handle
fault conditions such as capacitive mode switching, end-of-lamp-life and overcurrent.
UBA2013/L3 is designed for wide-input mains voltage (120 V - 277 V) applications.
2. Features
2.1 Half bridge
Suitable for cold and warm ignition
Adjustable preheat time
Adjustable ignition voltage
Integrated bootstrap function
Protection for lamp failure and
end-of-life
Adjustable preheat current
Single ignition attempt
Automatic restart after relamping
Protection for capacitive mode
2.2 PFC
Three pin PFC controller using TON
control
Critical mode operation
Overvoltage/overcurrent protection
3. Applications
The UBA2013/L3 can provide the drive and control function for a wide range of half bridge
based ballast applications at different mains voltages.
4. Ordering information
Table 1. Ordering information
Type number
Package
Name
Description
UBA2013T
SO16
plastic small outline package; 16 leads; body width 3.9mm
Version
SOT109-1
Free Datasheet http://www.datasheet4u.com/
1 page  
7.4 Preheat state
The circuit starts oscillating at the half-bridge frequency fstart (approximately 2.5 x fB). The
frequency gradually decreases until a user-defined value of the preheat current is
reached. The slope of the decrease in frequency is determined by the capacitor at the CI
pin. During preheat, the circuit monitors the inductor current by measuring the voltage
across external resistor RS at the end of the conduction of T2 with decision level VRS(ph).
The frequency is decreased for as long as VRS < VRS(ph). The frequency is increased for
VRS > VRS(ph). During preheat the STOP pin is discharged to ground via a switch with an
on resistance of RSTOP(disch). The cycle-by-cycle excess charge control mechanism
described in the ignition state is not active during the preheat state. The preheat time is
determined by capacitor CP. For cold ignition the preheat time can be reduced by
choosing a smaller CP capacitor. The circuit can be locked in the preheat state by
connecting pin CP to ground.
7.5 Ignition state
After the preheat time the ignition state is entered and the frequency will sweep down due
to charging of the capacitor at the CI pin with the internally fixed current ICI(charge). During
this decrease in frequency, the circuit approaches the resonance frequency of the load.
This will cause a high voltage across the load, which normally ignites the lamp.
In order to limit voltages and currents in the resonant circuit in case of non- or delayed
ignition, a cycle-by-cycle excess charge control mechanism is used to prevent deep
saturation and to limit the lamp voltage. When the voltage at pin RS exceeds VRS(clamp)
the impedance of the pin changes from essentially infinite to essentially zero. If a current
is flowing into pin RS during the on-state of T2, a fraction kIsat of that current will be fed
into the capacitor CCF at pin CF in addition to the oscillator current already flowing into
CCF. The amount of current fed into CCF depends on the voltage across RS and the value
of resistor R, see Figure 4. The increased current rapidly (but not instantly) ends the
oscillator half-cycle, after which T2 is switched off. The on-time of T1 is not affected and
thus the half bridge will run asymmetrically, see Figure 4.
Free Datasheet http://www.datasheet4u.com/
5 Page 
[3] At Tamb = 25 °C the typical VBE is 0.7 V.
[4] At negative RS currents (typ. < -5 mA) capacitive-mode protection can be triggered.
9. Thermal characteristics
Table 4. Thermal characteristics
Symbol Parameter
Rth(j-a) thermal resistance from junction to ambient
SO16
Rth(j-pin) thermal resistance from junction to pin
SO16
Conditions
in free air
in free air
Typ Unit
100 K/W
50 K/W
10. Characteristics
Table 5. Characteristics
Tamb = 25 °C; VVDD = 13.0 V; CCF = 100 pF; RRREF = 33 kΩ; CCP = 100 nF; CCI = 100 nF; all voltages referenced to ground
unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ Max Unit
High-voltage supply
IL1 Leakage current: high-voltage pins FS, G1, S1 = 630 V, VVDD= 0 V
Start-up state
15 µA
VDD(start)
Start of oscillation
VDD(low)
Stop of oscillation
VDD(hys)
Start-stop hysteresis
IVDD(nonosc)
Non-oscillating current
VDD(clamp)
Clamp voltage VDD
VDD(reset)
Reset voltage
Preheat voltage
VVDD = 12 V
At 5 mA non-oscillating
12.1 12.6 13.1 V
9.7 10.2 10.7 V
2.2 2.4 2.6 V
[2] 100 150 200 µA
10.0 12.0 14.0 V
[10] 4.5 5.5 6.5 V
fstart
TPH
ICP(charge)
ICP(discharge)
∆VCP(pk)
VCP(min)
VRS(ph)
Ignition state
Starting frequency
Preheat time
Charge current at CP pin
Discharge current at CP pin
Peak voltage difference at CP pin
CP comparator level low
Control voltage at RS pin
VCI = 0
CCP = 100 nF
VCP = 1.0 V
VCP = 3.5 V
When timing
[1] 101 112.5 124 kHz
574 674 796 ms
6.0 µA
6.0 µA
2.45 V
1.10 1.25
V
[5] 365 400 435 mV
TIG
VRS(clamp)
kIsat
Burn state
Ignition time
Saturation current detection level
Saturation control current gain
CCP = 100 nF
At IRS(ig) = 0.5 mA
512 611 730 ms
0.75 V
[6] 0.45 0.50 0.55 A/A
fB
TNO
SYM fB
SYM TNO
Bottom frequency
Non-overlap time
Symmetry half bridge
Symmetry non-overlap time
[1] 43.6
1.05
[1][9] 0.9
[11]
45.0
1.40
1.0
1.0
46.4
1.75
1.1
kHz
µs
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
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