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PDF 2SB1218A Data sheet ( Hoja de datos )
| Número de pieza | 2SB1218A | |
| Descripción | PNP Silicon Epitaxial Paner Transistors | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SB1218A
-0.1A , -60V
PNP Silicon Epitaxial Paner Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
APPLICATIONS
General Purpose Amplification
FEATURES
High DC Current Gain
Complementary to 2SD1819A
CLASSIFICATION OF hFE
Product-Rank 2SB1218A-Q
Range
160~260
Marking
BQ1
2SB1218A-R
210~340
BR1
2SB1218A-S
290~460
BS1
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
LeaderSize
7’ inch
SOT-323
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
--
0.650 TYP.
Collector
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction & Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
Ratings
-45
-45
-7
-100
150
833
150, -55 ~ 150
Base
Emitter
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
-45
-45
-7
-
-
-
160
-
-
-
Typ.
-
-
-
-
-
-
-
-
80
2.7
Max.
-
-
-
-100
-100
-100
460
-0.5
-
-
Unit
V
V
V
nA
μA
nA
V
MHz
pF
Test Conditions
IC= -10μA, IE=0
IC= -2mA, IB=0
IE= -10μA, IC=0
VCB= -20V, IE=0
VEB= -10V, IB=0
VEB= -5V, IC=0
VCE= -10V, IC= -2mA
IC= -100mA, IB= -10mA
VCE= -10V, IE=1mA, f=200MHz
VCB= -10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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