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Datasheet 2SA1577 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2SA1577 | Medium Power Transistor (-32V/ -0.5A) 2SA1577
Medium Power Transistor (-32V, -500mA)
Parameter
VCEO IC
Value
-32V -500mA
lFeatures
1)Large IC. ICMAX=-500mA 2)Low VCE(sat). Ideal for low-voltage operation. 3)Complements the 2SC4097.
lOutline
UMT3
SOT-323 SC-70
lInner circuit
Datashe | ROHM Semiconductor | transistor |
2 | 2SA1577 | Transistor SMD Type
Medium Power Transistor 2SA1577
Transistors IC
Features
Large IC.ICMAX. = -500mA Low VCE(sat). Ideal for low-voltage operation.
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current | Kexin | transistor |
3 | 2SA1577 | PNP Silicon General Purpose Transistor 2SA1577
PNP Silicon
Elektronische Bauelemente
RoHS Compliant Product
General Purpose Transistor
A L
3 1 2
1 3
Top View
2
B S
SOT-323 Dim A B C D
K J
Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280
Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420
V
| SeCoS | transistor |
4 | 2SA1577 | Transistor SMD Type
Product specification
Transistors
2SA1577
Features
Large IC.ICMAX. = -500mA Low VCE(sat). Ideal for low-voltage operation.
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Col | TY Semiconductor | transistor |
5 | 2SA1577-P | PNP Gneral Purpose Transistors MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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2SA1577-P 2SA1577-Q 2SA1577-R
PNP Gneral Purpose Transistors
•
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. | MCC | transistor |
2SA Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2SA0683 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
2 | 2SA0684 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
3 | 2SA0879 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1573 ■ Features
• High collector-emitter voltage (Base open) VCEO
0.7+0.3 –0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base vo Panasonic Semiconductor transistor | | |
4 | 2SA0885 | Transistor, Silicon PNP Epitaxial Type Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SC1846 ■ Features
• Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t Panasonic Semiconductor transistor | | |
5 | 2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1847
φ 3.16±0.1
3.8±0.3
Unit: mm
8.0+0.5 –0.1 3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter volt Panasonic Semiconductor transistor | | |
6 | 2SA100 | Ge PNP Drift ETC transistor | | |
7 | 2SA1001 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1001
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY Inchange Semiconductor transistor | |
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