UPA2690T1R Datasheet PDF - Renesas
Part Number | UPA2690T1R | |
Description | COMPLEMENTARY MOSFET | |
Manufacturers | Renesas | |
Logo | ||
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COMPLEMENTARY MOSFET
20V, 4.0A, 42mΩ / –20V, –3.0A, 79mΩ
Data Sheet
R07DS1000EJ0101
Rev.1.01
Mar 04, 2013
Description
The μPA2690T1R is Dual N- and P-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
Features
• N-channel 2.5V, P-channel 1.8V drive available
• Low on-state resistance
N-channel
⎯ RDS (on)1 = 42 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)
⎯ RDS (on)2 = 62 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A)
P-channel
⎯ RDS (on)1 = 79 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
⎯ RDS (on)2 = 105 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)
⎯ RDS (on)3 = 182 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)
• Built-in gate protection diode
• Lead-free and Halogen-free
6pinHUSON2020(Dual)
Ordering Information
Part Number
Package
μPA2690T1R-E2-AX∗1
6pinHUSON2020(Dual)
Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol N-CHANNEL P-CHANNEL
Drain to Source Voltage (VGS = 0 V)
VDSS
20
–20
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
m10
Drain Current (DC)
Drain Current (pulse) ∗1
Total Power Dissipation (1 unit, 5 s) ∗2
Total Power Dissipation (2 units, 5 s) ∗2
ID(DC)
ID(pulse)
PT1
PT2
±4.0 m3.0
±16 m12
1.5
2.3
Channel Temperature
Tch
150
Storage Temperature
TSTG
–55 to +150
Notes: ∗1. PW≤10 μs, Duty Cycle≤1%
∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt
Unit
V
V
A
A
W
W
°C
°C
Caution: This product (N-channel) is electrostatic-sensitive device due to low ESD capability and should
be handled with caution for electrostatic discharge.
VESD = ±400V MIN. ( C = 100pF, R = 1.5KΩ )
R07DS1000EJ0101 Rev.1.01
Mar 04, 2013
Page 1 of 10
Free Datasheet http://www.datasheet4u.com/
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μPA2690T1R
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
VGS=4.5V
15
2.5V
10
5
Pulsed
0
0 0.5 1 1.5 2
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.2
1.0
0.8
0.6
0.4
0.2
VDS = 10V
ID = 1mA
0.0
-50 0 50 100 150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
Pulsed
80
60
VGS = 2.5V
40
4.5V
20
0
0.1
1 10
ID - Drain Current - A
100
R07DS1000EJ0101 Rev.1.01
Mar 04, 2013
FORWARD TRANSFER CHARACTERISTICS
10
1 TA=150°C
75°C
25°C
0.1 -55°C
0.01
0.001
0.0001
0
VDS = 10V
Pulsed
0.5 1 1.5 2
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = 150°C
75°C
10 25°C
-55°C
1
0.1
0.01
0.001
VDS = 10V
Pulsed
0.001 0.01 0.1 1 10 100
ID – Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
ID = 2.0A
Pulsed
80
60
40
20
0
0 2 4 6 8 10
VGS - Gate to Source Voltage - V
Page 5 of 10
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Information | Total 11 Pages | |
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