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Datasheet N0603N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | N0603N | N-CHANNEL MOSFET Preliminary Data Sheet
N0603N
N-CHANNEL MOSFET FOR SWITCHING
Description
R07DS0559EJ0100 Rev.1.00 Nov 07, 2011
The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A | Renesas | mosfet |
N06 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | N0600N | MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet
N0600N
MOS FIELD EFFECT TRANSISTOR
Description
R07DS0220EJ0100 Rev.1.00 Jan 25, 2011
The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A Renesas transistor | | |
2 | N0601N | N-CHANNEL MOSFET Preliminary Data Sheet
N0601N
N-CHANNEL MOSFET FOR SWITCHING
Description
R07DS0557EJ0100 Rev.1.00 Nov 07, 2011
The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A Renesas mosfet | | |
3 | N0602N | N-CHANNEL MOSFET Preliminary Data Sheet
N0602N
N-CHANNEL MOSFET FOR SWITCHING
Description
R07DS0558EJ0100 Rev.1.00 Nov 07, 2011
The N0602N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A Renesas mosfet | | |
4 | N0603N | N-CHANNEL MOSFET Preliminary Data Sheet
N0603N
N-CHANNEL MOSFET FOR SWITCHING
Description
R07DS0559EJ0100 Rev.1.00 Nov 07, 2011
The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A Renesas mosfet | | |
5 | N0604N | N-CHANNEL MOSFET Data Sheet
N0604N
N-channel MOSFET 60 V, 82 A, 6.5 mΩ
Description
The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications. R07DS0850EJ0100 Rev.1.00 Aug 27, 2012
Features
• Low on-state resistance RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Lo Renesas mosfet | | |
6 | N0634LC380 | Phase Control Thyristor WESTCODE
Date:- 13 Feb, 2002 Data Sheet Issue:- 1
Phase Control Thyristor Types N0634LC380 to N0634LC420
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak reverse voltage, (not WESTCODE thyristor | | |
7 | N0634LC400 | Phase Control Thyristor WESTCODE
Date:- 13 Feb, 2002 Data Sheet Issue:- 1
Phase Control Thyristor Types N0634LC380 to N0634LC420
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak reverse voltage, (not WESTCODE thyristor | |
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