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PDF FGAF20N60SMD Data sheet ( Hoja de datos )

Número de pieza FGAF20N60SMD
Descripción Field Stop IGBT
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FGAF20N60SMD Hoja de datos, Descripción, Manual

April 2013
FGAF20N60SMD
600 V, 20 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.7 V(Typ.) @ IC = 20 A
• High Input Impedance
• Fast Swiching: EOFF = 7 uJ/A
• Tightened Parameter Distribution
• RoHS Compliant
Applications
• Sewing Machine, CNC
• Home Appliances, Motor-Control
General Description
Using novel field stop IGBT technology, Fairchild®’s new series
of field stop 2nd generation IGBTs offer the optimum perfor-
mance for solar inverter, UPS, welder and PFC applications
where low conduction and switching losses are essential.
C
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
G
E
Ratings
600
± 20
40
20
60
20
10
60
75
37.5
-55 to +175
-55 to +175
300
Unit
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
©2012 Fairchild Semiconductor Corporation
FGAF20N60SMD Rev. C2
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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FGAF20N60SMD pdf
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
15
10
20A
IC = 10A
5
40A
0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
2000
1000
Cies
Coes
100
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
20
5 10 15 20 25 30
Collector-Emitter Voltage, VCE [V]
Figure 11. SOA Characteristics
100
10µs
10 100µs
1ms
10ms
1 DC
0.1 *Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.01
1 10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 175oC
16
12
8
10A
4
IC = 20A
40A
0
4 8 12 16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
VCC = 200V
400V
300V
9
6
3
0
0 20 40 60 80
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
10
1
0
tr
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG []
50
©2012 Fairchild Semiconductor Corporation
FGAF20N60SMD Rev. C2
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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