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PDF UMD2N Data sheet ( Hoja de datos )
| Número de pieza | UMD2N | |
| Descripción | NPN-PNP built-in resistors Multi-Chip Digital Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de UMD2N (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Elektronische Bauelemente
UMD2N
NPN-PNP built-in resistors
Multi-Chip Digital Transistor
Features
.055(1.40)
.047(1.20)
SOT-363
.026TYP
(0.65TYP)
.021REF
(0.525)REF
8o
0o
* DTA124E and DTC124E transistors are
built-in a SOT-363 package.
* Transistor elements are independent,
eliminating interference.
* Mounting cost and area can be cut in half.
MARKING:D2
(3) (2) (1)
R1 R2
DT r2
DT r1
R2 R1
(4) (5) (6)
R1=R2=22K
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25OC unless otherwise specified)
Parameter
Symbol
Supply voltage
Input voltage
Output current
Power dissipation
VCC
VIN
IO
IC(MAX)
Pd
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25℃)
Parameter
Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
3
56
15.4
0.8
Limits
50
-10~40
30
-100
150(TOTAL)
150
-55~150
Typ Max. Unit
0.5
V
0.3 V
0.36 mA
0.5 µA
22 28.6 KΩ
1 1.2
250 MHz
Unit
V
V
mA
mW
℃
℃
Conditions
VCC=5V ,IO=100μA
VO=0.2V ,IO=10mA
IO/II=10mA/0.5mA
VI=5V
VCC=50V, VI=0
VO=5V,IO=5mA
VCE=10V ,IE=-5mA,f=100MHz
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. A
Any changing of specification will not be informed individual
Free Datasheet http://wwPwa.gdeata1sohef e3t4u.com/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet UMD2N.PDF ] | |
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