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PDF PTFA080551E Data sheet ( Hoja de datos )
| Número de pieza | PTFA080551E | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FETs | |
| Fabricantes | Infineon | |
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Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
55 W, 869 – 960 MHz
Description
The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs
designed for EDGE and CDMA power amplifier applications in the
869 to 960 MHz band. Features include input matching and thermally-
enhanced packages with slotted or earless flanges. Manufactured
with Infineon's advanced LDMOS process, these devices provide
excellent thermal performance and superior reliability.
PTFA080551E
Package H-36265-2
PTFA080551F
Package H-37265-2
PTFA080551E
PTFA080551F
Three-carrier CDMA2000 Performance
VDD = 28 V, IDQ = 450 mA, ƒ = 960 MHz
40 -35
35 Efficiency
30
25
ACP Low
20
ACP Up
15
10 ALT Up
5
-40
-45
-50
-55
-60
-65
0 -70
29 31 33 35 37 39 41 43
Output Power, Avg. (dBm)
Features
• Broadband internal matching
• Typical EDGE performance
- Average output power = 26 W
- Gain = 18 dB
- Efficiency = 44%
• Typical CW performance
- Output power at P–1dB = 75 W
- Gain = 17 dB
- Efficiency = 67%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 55 W
(CW) output power
• Pb-free and RoHS compliant
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 26 W AVG, ƒ = 959.8 MHz
Characteristic
Symbol Min Typ Max Unit
Error Vector Magnitude
EVM (RMS) —
2.5
—
%
Modulation Spectrum @ 400 kHz
ACPR
— –60
—
dBc
Modulation Spectrum @ 600 kHz
ACPR
— –75
—
dBc
Gain
Drain Efficiency
Gps — 18 — dB
ηD
— 44
—
%
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03, 2008-10-22
Free Datasheet http://www.datasheet4u.com/
1 page  
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Output Power (P–1dB) vs. Drain Voltage
IDQ = 600 mA, ƒ = 960 MHz
51
50
49
48
47
46
45
24
26 28 30
Drain Voltage (V)
32
PTFA080551E
PTFA080551F
IS-95 CDMA Performance
VDD = 28 V, IDQ = 450 mA, ƒ = 960 MHz
TCASE = 25°C
45 TCASE = 90°C
40
35
Efficiency
0
-10
-20
30 -30
25 ACP FC – 0.75 MHz
20
-40
-50
15 -60
10 -70
5 ACPR FC + 1.98 MHz -80
0 -90
29 31 33 35 37 39 41 43
Output Power, Avg. (dBm)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.778 A
1.03
1.55 A
1.02 3.11 A
1.01 3.88 A
1.00 4.66 A
5.44 A
0.99
6.22 A
0.98 7.00 A
0.97
0.96
-20
0 20 40 60 80
Case Temperature (°C)
100
Data Sheet
5 of 11
Rev. 03, 2008-10-22
5 Page 
PTFA080551E/F
Confidential, Limited Internal Distribution
Revision History:
2008-10-22
Previous Version:
2008-10-14, Data Sheet
Page
Subjects (major changes since last revision)
5 Remeasure Voltage vs. Temperature
9, 10
Update package outline diagrams and information
11 Update company information.
Data Sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2008-10-22
Published by
InfineonTechnologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 03, 2008-10-22
11 Page | ||
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| PDF Descargar | [ Datasheet PTFA080551E.PDF ] | |
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