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What is K12A50D?

This electronic component, produced by the manufacturer "Toshiba Semiconductor", performs the same function as "TK12A50D".


K12A50D Datasheet PDF - Toshiba Semiconductor

Part Number K12A50D
Description TK12A50D
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 


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TK12A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK12A50D
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.)
High forward transfer admittance: |Yfs| = 6.0 S (typ.)
Low leakage current: IDSS = 10 μA (VDS = 500 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
500
±30
12
48
45
364
12
4.5
http://www.DataSheet4U.net/
150
-55 to 150
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78 °C/W
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 4.3 mH, RG = 25 Ω, IAR = 12 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
1 2008-09-10
datasheet pdf - http://www.DataSheet4U.net/

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K12A50D equivalent
TK12A50D
rth – tw
10
1 Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 2.78°C/W
0.001
10μ 100μ
1m
10m
100m
1
10
PULSE WIDTH tw (s)
SAFE OPERATING AR
100
ID max (PULSED) *
ID max (CONTINUOUS) *
10
1 ms *
100 μs *
1 DC OPERATION
Tc = 25°C
0.1
* SINGLE NONREPETITIVE PULSE
0.01 Tc=25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0.001
1
10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE VDS (V)
EAS – Tch
500
400
300
http://www.DataSheet4U.net/
200
100
0
25 50
75 100 125 150
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
15 V
15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVEFORM
RG = 25 Ω
VDD = 90 V, L = 4.3 mH
ΕAS
=
1
2
L
I2
⎜⎜⎝⎛
BVDSS
BVDSS VDD
⎟⎟⎠⎞
5 2008-09-10
datasheet pdf - http://www.DataSheet4U.net/


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K12A50DThe function is TK12A50D. Toshiba SemiconductorToshiba Semiconductor

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