UTT18P10 Datasheet PDF - Unisonic Technologies
Part Number | UTT18P10 | |
Description | P-CHANNEL POWER MOSFET | |
Manufacturers | Unisonic Technologies | |
Logo | ||
There is a preview and UTT18P10 download ( pdf file ) link at the bottom of this page. Total 6 Pages |
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UTT18P10
Preliminary
100V, 19A P-CHANNEL
POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC UTT18P10 is a P-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed, cost-effectiveness and a minimum on-state resistance. It can
also withstand high energy in the avalanche.
FEATURES
* RDS(ON)<0.20Ω @ VGS=-10V, ID=-11A
* High Switching Speed
SYMBOL
2.Drain
1
TO-252
1.Gate
3.Source
www.DataSheet.net/
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT18P10L-TN3-R
UTT18P10G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-252
Pin Assignment
123
GDS
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R502-619.a
Datasheet pdf - http://www.DataSheet4U.co.kr/
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UTT18P10
Preliminary
TEST CIRCUITS AND WAVEFORMS(Cont.)
Power MOSFET
(Note 1)
Driver Gate Drive
P.W.
Period
www.DataSheet.net/
D=
P.W.
Period
VGS=10V *
(Note 2)
Reverse
Recovery
Current
(Note 3)
Re-Applied
Voltage
D.U.T. ISD Waveform
Body Diode Forward Current
D.U.T. VDS Waveform
Diode di/dt
Recovery
dv/dt
Body Diode
Inductor Curent
Forward Drop
Ripple≤5
%
*** VGS=5V for Logic Level and 3V Drive Devices
For N and P Channel Power MOSFET
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. VDD=-25V, starting TJ=25°C, L=2.7mH, RG=25Ω, IAS=-19A. (See Figure 2)
3. ISD≤-19A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤175°C
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
VDD
ISD
5 of 6
QW-R502-619.a
Datasheet pdf - http://www.DataSheet4U.co.kr/
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for UTT18P10 electronic component. |
Information | Total 6 Pages | |
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Download | [ UTT18P10.PDF Datasheet ] |
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