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PDF UTT30N06 Data sheet ( Hoja de datos )
| Número de pieza | UTT30N06 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de UTT30N06 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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UNISONIC TECHNOLOGIES CO., LTD
UTT30N06
30A, 60V N-CHANNEL
POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC UTT30N06 is a low voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and excellent avalanche
characteristics. This power MOSFET is usually used in automotive
applications of power supplies, high efficient DC to DC converters
and battery operated products.
FEATURES
* RDS(ON) = 40mΩ@VGS = 10 V
* Ultra low gate charge ( typical 20 nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
SYMBOL
2.Drain
www.DataSheet.net/
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UTT30N06L-TN3-R UTT30N06G-TN3-R
TO-252
UTT30N06L-TA3-T UTT30N06G-TA3-T
TO-220
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1 23
G DS
G DS
Packing
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-637.A
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
UTT30N06
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
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Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
RD
10V
tp
D.U.T.
VDD
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
ID(t)
VDS(t)
tp Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-637.A
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UTT30N06.PDF ] | |
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