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Datasheet 2N5912 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N5912 | Dual N-Channel JFET High Frequency Amplifier Dual N-Channel JFET High Frequency Amplifier
CORPORATION
2N5911 / 2N5912
FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50m |  Calogic LLC | amplifier |
| 2 | 2N5912 | (2N5xxx) JFET N-Channel Metal Can JFET’s
Part No. BVGSS Min. (V) VP Min. (V) @ Max. (V) (V) VD S &
2N5432 2N5433 2N5434 25
4.0 3.0 1.0
10.0
Part No.
w
w
2N3684 2N3686 2N3822
w
.D
BV GSS Min. (V) 50 50 50 40 35 30 30 30 25
at
h S a
(V) 2.0 0.6 1.0 2.5 2.5 4.0 2.0 1.0
ee
9.0 4.0
U 4 t
5 5 5 VP @
.c |  Taitron Components | data |
| 3 | 2N5912 | High Gain 2N5912 MONOLITHIC DUAL N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix & National 2N5912
The 2N5912 are monolithic dual JFETs. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These device |  Micross | data |
| 4 | 2N5912 | N-CHANNEL DUAL SILICON JUNCTION FET |  New Jersey Semiconductor | data |
| 5 | 2N5912C | High Gain 2N5912C MONOLITHIC DUAL N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix & National 2N5912C
The 2N5912C are monolithic dual JFETS. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These dev | Micross | data |
2N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N5000 | NPN Silicon Power Transistor Texas transistor | | |
| 2 | 2N5000 | Trans GP BJT NPN 80V 2A 3-Pin TO-59 New Jersey Semiconductor data | | |
| 3 | 2N5001 | PNP Transistor 2 AMP PNP
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mhaFEx
@Ic (A)
VmCEa(sxat) (V)
@(A)IC
mfTin (MHz)
mPaTx
*TC=100°C
(W)
Package
2N3205
2
40
20
60 Note 1 0.4
Note 1
Note 1
40
TO-59
2N32  SSDI transistor | | |
| 4 | 2N5001 | Trans GP BJT PNP 80V 2A 3-Pin TO-59 New Jersey Semiconductor data | | |
| 5 | 2N5002 | HIGH SPEED NPN TRANSISTOR SSDI transistor | | |
| 6 | 2N5002 | Type 2N5002 Geometry 9202 Polarity NPN Data Sheet No. 2N5002
Type 2N5002
Geometry 9202 Polarity NPN Qual Level: JAN - JANTXV
Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case. Also available in chip form using the 9202 chip geometry. The Min and Max limits shown  Semicoa Semiconductor data | | |
| 7 | 2N5002 | (2N5002 / 2N5004) NPN POWER SILICON TRANSISTOR TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Symbol
VCEO VCBO VEBO IC IC(3) PT T  Microsemi Corporation transistor | |
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