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PDF GWM120-0075X1 Data sheet ( Hoja de datos )
| Número de pieza | GWM120-0075X1 | |
| Descripción | Three phase full Bridge | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
GWM 120-0075X1
VDSS = 75 V
ID25 = 110 A
RDSon typ. = 4.0 mW
L+
G3 G5
G1
S3 S5
S1 L1
L2
L3
G2 G4 G6
S2 S4 S6
L-
MOSFETs
Symbol Conditions
VDSS
VGS
TVJ = 25°C to 150°C
ID25 TC = 25°C
ID90 TC = 90°C
IF25 TC = 25°C (diode)
IF90 TC = 90°C (diode)
Maximum Ratings
75 V
± 20 V
110 A
85 A
110 A
80 A
Symbol
RDSon
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Erecoff
RthJC
RthJH
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
on chip level at
VGS = 10 V; ID = 60 A
VDS = 20 V; ID = 1 mA
VDS = VDSS; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
VGS = 10 V; VDS = 36 V; ID = 25 A
VGS = 10 V; VDS = 30 V
ID = 80 A; RG = 39 Ω
inductive load
TVJ = 125°C
with heat transfer paste (IXYS test setup)
4.0
7.2
2
0.1
115
30
30
130
100
500
100
0.20
0.50
0.01
1.3
4.9 mW
8.4 mW
4V
1 µA
mA
0.2 µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
1.0 K/W
1.6 K/W
Straight leads
Surface Mount Device
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110407d
1-6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
GWM 120-0075X1
14
12
ID = 125 A
TJ = 25°C
10
8 VDS = 15 V
6
VDS = 55 V
4
2
0
0 20 40 60 80 100 120
QG [nC]
Fig.7 Gate charge characteristic
140
0.5
VDS = 30 V
0.4
VGS = +10/0 V
RG = 39 Ω
0.3 TJ = 125°C
td(on)
tr
200
160
120
0.2 80
0.1
Eon
0.0
0
20
Erec(off) x10
40 60 80
ID [A]
40
0
100 120 140
Fig. 9 Typ. turn-on energy & switching times
vs. collector current, inductive switching
1.50
1.25
1.00
VDS = 30 V
VGS = +10/0 V
ID = 125 A
TJ = 125°C
300
tr
td(on)
250
200
0.75
150
0.50
0.25
0.00
0
Eon
Erec(off) x10
20 40 60 80
RG [Ω]
100
50
0
100 120
Fig. 11 Typ. turn-on energy & switching times
vs. gate resistor, inductive switching
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160 180
TJ [°C]
Fig. 8 Drain current ID vs. case temperature TC
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
Eoff
20
VDS = 30 V
VGS = +10/0 V
RG = 39 Ω
TJ = 125°C
40 60 80
ID [A]
1000
900
800
700
600
td(off)
500
400
300
200
tf 100
0
100 120 140
Fig. 10 Typ. turn-off energy & switching times
vs. collector current, inductive switching
1.8
1.6
VDS = 30 V
VGS = +10/0 V
1.4 ID = 125 A
1.2 TJ = 125°C
1.0
0.8
0.6 Eoff
0.4
0.2
0.0
0
20 40
60 80
RG [Ω]
1800
1600
1400
td(off)
1200
1000
800
600
400
tf 200
0
100 120
Fig. 12 Typ. turn-off energy & switching times
vs. gate resistor, inductive switching
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110407d
5-6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GWM120-0075X1.PDF ] | |
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