GB70NA60UF Datasheet PDF - Vishay Siliconix
Part Number | GB70NA60UF | |
Description | Warp 2 Speed IGBT | |
Manufacturers | Vishay Siliconix | |
Logo | ||
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GB70NA60UF
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Warp 2 Speed IGBT), 70 A
SOT-227
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
• Low VCE(on)
• FRED Pt® hyperfast rectifier
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 70 A, 25 °C
IF DC
600 V
70 A at 88 °C
2.4 V
70 A at 86 °C
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Higher switching frequency up to 150 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Peak diode forward current
Gate to emitter voltage
IFM
VGE
Power dissipation, IGBT
PD
Power dissipation, diode
RMS isolation voltage
PD
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
600
111
76
120
120
113
75
200
± 20
447
250
236
132
2500
UNITS
V
A
V
W
V
Document Number: 93103 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
|
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www.DataSheet.co.kr
GB70NA60UF
"High Side Chopper" IGBT SOT-227 Vishay Semiconductors
(Warp 2 Speed IGBT), 70 A
170 30
145
TJ = 125 °C
120
95
25
20
TJ = 125 °C
15
70 TJ = 25 °C
45
20
100
1000
dIF/dt (A/µs)
Fig. 11 - Typical trr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
1250
10
5 TJ = 25 °C
0
100
1000
dIF/dt (A/µs)
Fig. 12 - Typical Irr Diode vs. dIF/dt
VRR = 200 V, IF = 50 A
1050
850
TJ = 125 °C
650
450
250 TJ = 25 °C
50
100
1000
dIF/dt (A/µs)
Fig. 13 - Typical Qrr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
1
0.1
0.01
0.001
0.00001
D = 0.50
D = 0.20
DC
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 14 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
100
Document Number: 93103 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
5
Datasheet pdf - http://www.DataSheet4U.net/
Preview 5 Page |
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