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PDF GB100TS60NPBF Data sheet ( Hoja de datos )
| Número de pieza | GB100TS60NPBF | |
| Descripción | Ultrafast Speed IGBT | |
| Fabricantes | Vishay Siliconix | |
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GB100TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 108 A
INT-A-PAK
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 100 A, 25 °C
600 V
108 A
2.6 V
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: Optimized for hard switching speed
8 kHz to 60 kHz
• Low VCE(on)
• 10 μs short circuit capability
• Square RBSOA
• Positive VCE(on) temperature coefficient
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Gate to emitter voltage
VGE
Maximum power dissipation
PD
Isolation voltage
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
600
108
74
200
200
106
69
± 20
390
219
2500
UNITS
V
A
V
W
V
Document Number: 94501
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
GB100TS60NPbF
INT-A-PAK "Half-Bridge" Vishay High Power Products
(Ultrafast Speed IGBT), 108 A
100
90
80 4.7 ohm
70
60
27 ohm
50
40
30 47 ohm
20
10
0
0 20 40 60 80 100 120
IF (A)
Fig. 11 - Typical Diode Irr vs. IF,
TJ = 125 °C
100
80
60
40
20
0
0 10 20 30 40 50
RG (Ω)
Fig. 12 - Typical Diode Irr vs. Rg,
TJ = 125 °C, IF = 100 A
90
80
70
60
50
600
800 1000 1200 1400 1600 1800
dIF / dt (A/μs)
Fig. 13 - Typical Diode Irr vs. dIF/dt,
TJ = 125 °C, VCC = 360 V, IF = 150 A, VGE = 15 V
9
8
7
6
5
4
3
2
1
0 10 20 30 40 50
RG (Ω)
Fig. 14 - Typical Switching Losses vs. Gate Resistance,
TJ = 125 °C, L = 200 μH, Rg = 10 Ω,
VCC = 360 V, VGE = 15 V
10
Ic = 100A
1 Ic = 50A
Ic = 25A
0.1
0
25 50 75 100 125
TJ - Junction Temperature (°C)
Fig. 15 - Typical Switching Losses vs. Junction Temperature,
L = 200 μH, Rg = 10 Ω, VCC = 360 V, VGE = 15 V
2.5
2
1.5
1
0.5
0
20
40 60
IC (A)
80
100
Fig. 16 - Typical Switching Losses vs.
Collector to Emitter Current,
TJ = 125 °C, Rg1 = 4.7 V, Rg2 = 0 Ω, VCC = 360 V, VGE = 15 V
Document Number: 94501
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
5
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5 Page | ||
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