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PDF GA400TD60S Data sheet ( Hoja de datos )
| Número de pieza | GA400TD60S | |
| Descripción | Standard Speed IGBT | |
| Fabricantes | Vishay Siliconix | |
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GA400TD60S
Vishay Semiconductors
Dual INT-A-PAK Low Profile "Half-Bridge"
(Standard Speed IGBT), 400 A
Dual INT-A-PAK Low Profile
FEATURES
• Generation 4 IGBT technology
• Standard: Optimized for hard switching speed
DC to 1 kHz
• Low VCE(on)
• Square RBSOA
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
• Compliant to RoHS Directive 2002/95/EC
• Designed for industrial level
PRODUCT SUMMARY
VCES
IC DC at TC = 25 °C
VCE(on) (typical) at 400 A, 25 °C
600 V
750 A
1.24 V
BENEFITS
• Increased operating efficiency
• Performance optimized as output inverter stage for TIG
welding machines
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
Continuous collector current
VCES
IC (1)
TC = 25 °C
TC = 80 °C
600
750
525
Pulsed collector current
ICM
1000
Clamped inductive load current
ILM
1000
Diode continuous forward current
TC = 25 °C
IF
TC = 80 °C
219
145
Gate to emitter voltage
VGE
± 20
Maximum power dissipation (IGBT)
TC = 25 °C
PD
TC = 80 °C
1563
875
RMS isolation voltage
VISOL
Any terminal to case
(VRMS t = 1 s, TJ = 25 °C)
3500
Note
(1) Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals
UNITS
V
A
V
W
V
Document Number: 93363
Revision: 31-May-11
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
GA400TD60S
Dual INT-A-PAK Low Profile "Half-Bridge" Vishay Semiconductors
(Standard Speed IGBT), 400 A
175
150
125
100
Eoff
75
50
25
0
0
Eon
100 200 300 400
93363_11
IC (A)
Fig. 11 - Typical IGBT Energy Loss vs. IC,
TJ = 125 °C, VCC = 360 V, Rg = 1.5 ,
VGE = 15 V, L = 500 μH
10 000
1000 td(off)
td(on)
100
tf
tr
10
0
100 200 300 400
93363_12
IC (A)
Fig. 12 - Typical IGBT Switching Time vs. IC,
TJ = 125 °C, VCC = 360 V, Rg = 1.5 ,
VGE = 15 V, L = 500 μH
175
150 Eoff
125
100
75
50
Eon
25
0
0 5 10 15 20 25
93363_13
Rg (Ω)
Fig. 13 - Typical IGBT Energy Loss vs. Rg,
TJ = 125 °C, IC = 400 A, VCC = 360 V,
VGE = 15 V, L = 500 μH
10 000
1000
tf
td(on)
tr
td(off)
100
0
5 10 15 20 25
93363_14
Rg (Ω)
Fig. 14 - Typical IGBT Switching Time vs. Rg,
TJ = 125 °C, IC = 400 A, VCC = 360 V,
VGE = 15 V, L = 500 μH
300
280
260
240 TJ = 125 °C
220
200
180
160 TJ = 25 °C
140
120
100
100 200 300 400 500 600 700 800 900 1000
93363_15
dIF/dt (A/μs)
Fig. 15 - Typical Reverse Recovery Time vs. dIF/dt,
VCC = 400 V, IF = 300 A
130
120
110
100
90
80 TJ = 125 °C
70
60
50
40 TJ = 25 °C
30
20
10
100 200 300 400 500 600 700 800 900 1000
93363_16
dIF/dt (A/µs)
Fig. 16 - Typical Reverse Recovery Current vs. dIF/dt,
VCC = 400 V, IF = 300 A
Document Number: 93363
Revision: 31-May-11
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet GA400TD60S.PDF ] | |
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