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PDF GA100TS60SFPBF Data sheet ( Hoja de datos )
| Número de pieza | GA100TS60SFPBF | |
| Descripción | IGBT | |
| Fabricantes | Vishay Siliconix | |
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GA100TS60SFPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Standard Speed IGBT), 100 A
INT-A-PAK
FEATURES
• Standard speed PT IGBT technology
• Standard speed: DC to 1 kHz, optimized for
hard switching speed
• FRED Pt® antiparallel diodes with fast recovery
• Very low conduction losses
• Al2O3 DBC
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 100 A, 25 °C
600 V
220 A
1.11 V
BENEFITS
• Optimized for high current inverter stages (AC TIG welding
machines)
• Direct mounting to heatsink
• Very low junction to case thermal resistance
• Low EMI
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Peak switching current
Gate to emitter voltage
RMS isolation voltage
ICM
ILM
VGE
VISOL
Maximum power dissipation
PD
TEST CONDITIONS
TC = 25 °C
TC = 130 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 100 °C
MAX.
600
220
100
440
440
± 20
2500
780
312
UNITS
V
A
V
W
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Collector to emitter leakage current
Diode forward voltage drop
Gate to emitter leakage current
VBR(CES)
VCE(on)
VGE(th)
ICES
VFM
IGES
VGE = 0 V, IC = 1 mA
VGE = 15 V, IC = 100 A
IC = 200 A
VGE = 15 V, IC = 100 A, TJ = 125 °C
IC = 0.25 mA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 125 °C
IC = 100 A, VGE = 0 V
IC = 100 A, VGE = 0 V, TJ = 125 °C
VGE = ± 20 V
MIN.
600
-
-
-
3
-
-
-
-
-
TYP.
-
1.11
1.39
1.08
-
-
-
1.44
1.25
-
MAX.
-
1.28
-
1.22
6
1
10
1.96
1.54
± 250
UNITS
V
mA
V
nA
Document Number: 94544
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
GA100TS60SFPbF
"Half-Bridge" IGBT INT-A-PAK Vishay High Power Products
(Standard Speed IGBT), 100 A
10000
Vr = 200V
If = 50A, Tj = 125˚C
1000
If = 50A, Tj = 25˚C
100
100
1000
dif /dt - A/μs
Fig. 11 - Typical Stored Charge vs. dIF/dt
ORDERING INFORMATION TABLE
Device code GA 100 T S 60 S F PbF
1 2 3 4567
1 - Essential part number IGBT modules
2 - Current rating (100 = 100 A)
3 - Circuit configuration (T = Half bridge)
4 - INT-A-PAK
5 - Voltage code (60 = 600 V)
6 - Speed/type (S = Standard speed IGBT)
7 - Diode type
8 - PbF = Lead (Pb)-free
CIRCUIT CONFIGURATION
3
8
Dimensions
6
7
1
4
5
2
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95173
Document Number: 94544
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
5
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