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PDF GT40QR21 Data sheet ( Hoja de datos )
| Número de pieza | GT40QR21 | |
| Descripción | Silicon N-Channel IGBT | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Discrete IGBTs Silicon N-Channel IGBT
GT40QR21
GT40QR21
1. Applications
• Dedicated to Voltage-Resonant Inverter Switching Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) 6.5th generation
(2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.
(3) Enhancement mode
(4) High-speed switching
IGBT : tf = 0.20 µs (typ.) (IC = 40 A)
FWD : trr = 0.60 µs (typ.) (IF = 15 A)
(5) Low saturation voltage : VCE(sat) = 1.9 V (typ.) (IC = 40 A)
(6) High junction temperature : Tj = 175 (max)
3. Packaging and Internal Circuit
TO-3P(N)
1: Gate
2: Collector
3: Emitter
1 2011-06-06
Rev.1.0
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
7. Marking (Note)
GT40QR21
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
5 2011-06-06
Rev.1.0
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet GT40QR21.PDF ] | |
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