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What is IPB47N10S-33?

This electronic component, produced by the manufacturer "Infineon Technologies", performs the same function as "SIPMOS Power-Transistor".


IPB47N10S-33 Datasheet PDF - Infineon Technologies

Part Number IPB47N10S-33
Description SIPMOS Power-Transistor
Manufacturers Infineon Technologies 
Logo Infineon Technologies Logo 


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www.DataSheet.co.kr
SIPMOS=Power-Transistor
Feature
 N-Channel
 Enhancement mode
175°C operating temperature
 Avalanche rated
P-TO262-3-1
 dv/dt rated
• Green package (lead free)
IPI47N10S-33
IPP47N10S-33, IPB47N10S-33
Product Summary
VDS 100 V
RDS(on) 33 m
ID 47 A
P-TO263-3-2
P-TO220-3-1
Type
IPP47N10S-33
IPB47N10S-33
IPI47N10S-33
Package
Ordering Code
PG-TO220-3-1 SP0002-25706
PG-TO263-3-2 SP0002-25702
PG-TO262-3-1 SP0002-25703
Marking
N1033
N1033
N1033
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC=25°C
TC=100°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=47 A , VDD=25V, RGS=25
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
ID
ID puls
EAS
EAR
dv/dt
IS=47A, VDS=0V, di/dt=200A/µs
Gate source voltage
VGS
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Ptot
Tj , Tstg
Page 1
Value
47
33
188
Unit
A
400 mJ
17.5
6 kV/µs
±20 V
175 W
-55... +175
55/175/56
°C
2006-02-14
Datasheet pdf - http://www.DataSheet4U.net/

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IPB47N10S-33 equivalent
www.DataSheet.co.kr
IPI47N10S-33
IPP47N10S-33, IPB47N10S-33
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
120
SPP47N10
Ptot = 175W
A
l
100 k j i
90
80
70
60
50
40
30
20
10
00 1 2 3 4 5
VGS [V]
a 4.0
b 4.5
h c 5.0
d 5.5
ge
f
6.0
6.5
g 7.5
f h 8.0
i
ej
9.0
9.0
k 10.0
d l 20.0
c
b
a
6V
8
VDS
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
100
m
vgs[V]
80 5V
5.5V
6V
70 6.5V
7V
60 7.5V
50 8V
40
9V
30 10V
20V
20
100 20 40 60 80 A 110
ID
7 Typ. transfer characteristics
ID= f ( VGS ); VDS 2 x ID x RDS(on)max
parameter: tp = 80 µs
60
A
50
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
35
S
45
25
40
35 20
30
25 15
20
10
15
10 5
5
00 1 2 3 4 5 6 7 8 V 10
VGS
00 10 20 30 40 A 60
ID
Page 5
2006-02-14
Datasheet pdf - http://www.DataSheet4U.net/


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IPB47N10S-33 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
IPB47N10S-33The function is SIPMOS Power-Transistor. Infineon TechnologiesInfineon Technologies

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