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PDF 2SD875 Data sheet ( Hoja de datos )
| Número de pieza | 2SD875 | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistors
2SD0875 (2SD875)
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SB0767 (2SB767)
4.5±0.1
1.6±0.2
Unit: mm
1.5±0.1
■ Features
• Large collector power dissipation PC
• High collector-emitter voltage (Base open) VCEO
• Mini power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation *
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
80
80
5
0.5
1
1
150
−55 to +150
V
V
V
A
A
W
°C
°C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
1
0.4±0.08
1.5±0.1
23
0.5±0.08
3˚
0.4±0.04
3.0±0.15
45˚
Marking Symbol: X
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
80
Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
80
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
0.1
Forward current transfer ratio
hFE1 * VCE = 10 V, IC = 150 mA
130 330
hFE2 VCE = 50 V, IC = 500 mA
50 100
Collector-emitter saturation voltage
VCE(sat) IC = 300 mA, IB = 30 mA
0.2 0.4
Base-emitter saturation voltage
VBE(sat) IC = 300 mA, IB = 30 mA
0.85 1.2
Transition frequency
fT VCB = 10 V, IE = −50 mA, f = 200 MHz
120
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
11 20
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE1 130 to 220 185 to 330
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002
SJC00198CED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD875.PDF ] | |
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