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PDF TSF5N60M Data sheet ( Hoja de datos )
| Número de pieza | TSF5N60M | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | Truesemi | |
| Logotipo |  |
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TSP5N60M/TSF5N60M
600V N-Channel MOSFET
Features
■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V
■ Gate charge (Typical 17nC)
■ High ruggedness
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability
General Description
This Power MOSFET is produced using Truesemi’s advanced
planar stripe, DMOS technology.This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics, such as fast switching time,low
on resistance.low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at AC
adaptors, on the battery charger and SMPS
Absolute Maximum Ratings
Symbol
Parameter
VDSS Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
ID
Continuous Drain Current(@TC = 100°C)
IDM
VGS
EAS
EAR
dv/dt
PD
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
TSP5N60M TSF5N60M Units
600 V
4.5 4.5* A
2.7 2.7* A
(Note 1)
18
18* A
±30 V
(Note 2)
280 mJ
(Note 1) 13 mJ
(Note 3)
4.5 V/ns
120 45
W
0.8 0.5 W/ °C
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5
seconds.
-55 ~ 150
300
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ
Thermal Resistance, Junction-to-Ambient
TSP5N60M TSF5N60M Units
1.25
3.79 °C/W
0.5 0.5 °C/W
62.5
62.5 °C/W
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TSF5N60M.PDF ] | |
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