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PDF UBA2211 Data sheet ( Hoja de datos )
| Número de pieza | UBA2211 | |
| Descripción | Half-bridge power IC family | |
| Fabricantes | NXP Semiconductors | |
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UBA2211
Half-bridge power IC family for CFL lamps
Rev. 2 — 3 January 2011
Objective data sheet
1. General description
The UBA2211 family of integrated circuits are a range of high voltage monolithic ICs for
driving Compact Fluorescent Lamps (CFL) in half-bridge configurations. The family is
specifically designed to provide easy integration of lamp loads across a range of burner
power and mains voltages.
Patented technologies and integrated protection types:
• Preheat state:
– Preheat applications: Adjustable current controlled preheat mode technology
enables the preheat time (tph) and preheat current to be set. This mode is triggered
during start up.
– Non-preheat applications: Glow-time control minimizes electrode damage just after
ignition of the lamp.
• Saturation Current Protection (SCP): This protection is active during ignition
ensuring the lamp inductor can operate at the saturation current limit without
exceeding the current ratings of the integrated half-bridge power transistors.
• RMS current control: The IC internally calculates the RMS current and changes the
frequency (fosc) to ensure the RMS current remains constant. RMS current control is
active in the burn state ensuring a constant half-bridge burner current and IC
dissipation. The nominal half-bridge burner current is set using the sense resistor
(RSENSE).
• OverTemperature Protection (OTP) and Capacitive Mode Protection (CMP):
Overtemperature and capacitive mode protection monitor the application ensuring, in
non-standard conditions, correct system shutdown and a safe condition at the
burner’s end-of-life.
2. Features and benefits
2.1 System integration
Integrated half-bridge power transistors
UBA2211A: 220 V mains; 13.5 Ω; 0.9 A maximum ignition current
UBA2211B: 220 V mains; 9 Ω; 1.35 A maximum ignition current
UBA2211C: 220 V mains; 6.6 Ω; 1.85 A maximum ignition current
Integrated bootstrap diode
Integrated high voltage supply
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1 page  
NXP Semiconductors
UBA2211
Half-bridge power IC family for CFL lamps
7. Functional description
7.1 Supply voltage
The UBA2211 family is powered using the start-up current source and the VDD supply.
When the voltage on pin HV increases, the VDD capacitor (CVDD) is charged using the
internal Junction gate Field-Effect Transistor (JFET) current source. The voltage on pin
VDD rises until VDD equals VDD(start). The start-up current source is then disabled. The
half-bridge starts switching causing the charge pump activate and in turn supply VDD.
The amount of current flowing towards VDD equals VHV × CDVDT × f where f represents the
momentary frequency. The charge pump consists of an external half-bridge capacitor
(CDVDT). The SO14 package contains two internal diodes with an internal Zener diode.
However, with the DIP8 package, these diodes must be mounted externally. The Zener
diode ensures the VDD voltage cannot rise above the maximum VDD rating.
The DVDT supply has its own ground pin (PGND) to prevent large peak currents from
flowing through the external small signal ground pin (SGND).
The start-up current source is enabled when the voltage on pin VDD is below VDD(stop).
7.2 Start-up state
When the supply voltage on pin VDD increases, the IC enters the start-up state. In the
start-up state the High-Side Power Transistor (HSPT) is switched off and the Low-Side
Power Transistor (LSPT) is switched on. The circuit is reset and the capacitors on the
bootstrap pin FS (Cbs) and the low-voltage supply pin VDD (CVDD) are charged. Pins RC
and SW are switched to ground.
When pin VDD is above VDD(start), the start-up state is exited and the preheat state is
entered. If the voltage on pin VDD falls below VDD(stop), the system returns to the start-up
state.
Remark: If OTP is active, the IC remains in the start-up state for as long as this is the
case. The VDD voltage slowly oscillates between VDD = VDD(stop) and VDD = VDD(start).
7.3 Reset
A DC reset circuit is incorporated in the high-side driver. The high-side transistor is
switched off when the voltage on pin FS is below the high-side lockout voltage.
7.4 Oscillation control
The oscillation frequency is based on the 555-timer function. A self oscillating circuit is
created comprising the external components: resistors Rosc, RSENSE and capacitor Cosc.
The nominal oscillating frequency is determined by Rosc and Cosc.
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An internal divider 0.5 × fosc(int) is used to generate the accurate 50 % duty cycle. The
divider sets the bridge frequency at half the oscillator frequency.
Signal VSW is generated by the input on pin SW and it is used to determine the frequency
in all states except preheat. Signal VSW(ph) is an internally generated signal used to
determine the frequency during the preheat state.
UBA2211
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 January 2011
© NXP B.V. 2011. All rights reserved.
5 of 19
5 Page 
NXP Semiconductors
UBA2211
Half-bridge power IC family for CFL lamps
9. Thermal characteristics
Table 4.
Symbol
Rth(j-a)
Rth(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to case
[1] In accordance with IEC 60747-1
10. Characteristics
Conditions
in free air
in free air
Typ
[1] 95
[1] 16
Unit
K/W
K/W
Table 5. Characteristics
Tj = 25 °C; all voltages are measured with respect to SGND; positive currents flow into the IC.
Symbol
Parameter
Conditions
Min
High-voltage supply
VHV voltage on pin HV
VFS voltage on pin FS
Low-voltage supply
t < 10 minutes; IHV < 30 μA
t < 10 minutes; IHV < 30 μA
0
0
Start-up state
IHV current on pin HV
VDD(start)
start supply voltage
VDD(stop)
stop supply voltage
VDD(hys)
hysteresis of supply voltage
VDD(reg)
regulation supply voltage
Isink sink current
Output stage
VHV = 100 V
oscillation start
oscillation stop
start − stop
capability of VDD regulator
-
10.7
8
3
-
6
Ron on-state resistance
high-side transistor:
UBA2211AX; VHV = 310 V; ID = 100 mA
UBA2211BX; VHV = 310 V; ID = 100 mA
UBA2211CX; VHV = 310 V; ID = 100 mA
low-side transistor:
[1]
-
-
-
[1]
Ron(150)/
Ron(25)
VF
on-state resistance ratio
(150 °C to 25 °C)
forward voltage
tno non-overlap time
www.VDFaStaSheet4U.cvoomltage on pin FS
IFS current on pin FS
UBA2211AX; ID = 100 mA
UBA2211BX; ID = 100 mA
UBA2211CX; ID = 100 mA
HS; IF = 200 mA
LS; IF = 200 mA
bootstrap diode; IF = 1 mA
lockout voltage
VHV = 310 V; VFS = 12 V
-
-
-
-
-
-
0.7
1.05
3.6
10
Typ Max Unit
- 550 V
- 564 V
0.85 -
mA
11.7 12.7 V
8.5 9
V
3.5 4
V
13.8 -
V
- - mA
13.5 -
9.3 -
6.6 -
Ω
Ω
Ω
13.5 -
8.2 -
6.6 -
1.7 -
Ω
Ω
Ω
- 2.0 V
- 2.0 V
1.0 1.3 V
1.35 1.65 μs
4.2 4.8 V
14 18 μA
UBA2211
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 January 2011
© NXP B.V. 2011. All rights reserved.
11 of 19
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