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What is ISL12022MA?

This electronic component, produced by the manufacturer "Intersil Corporation", performs the same function as "Low Power RTC".


ISL12022MA Datasheet PDF - Intersil Corporation

Part Number ISL12022MA
Description Low Power RTC
Manufacturers Intersil Corporation 
Logo Intersil Corporation Logo 


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Low Power RTC with Battery Backed SRAM,
Integrated ±5ppm Temperature Compensation and
Auto Daylight Saving
ISL12022MA
The ISL12022MA device is a low power real time clock
(RTC) with an embedded temperature sensor and
crystal. Device functions include oscillator compensation,
clock/calendar, power fail and low battery monitors,
brownout indicator, one-time, periodic or polled alarms,
intelligent battery backup switching, Battery Reseal™
function and 128 bytes of battery-backed user SRAM.
The device is offered in a 20 Ld SOIC module that
contains the RTC and an embedded 32.768kHz quartz
crystal. The calibrated oscillator provides less than ±5ppm
drift over the full -40°C to +85°C temperature range.
The RTC tracks time with separate registers for hours,
minutes, and seconds. The calendar registers track date,
month, year and day of the week and are accurate
through 2099, with automatic leap year correction.
Daylight Savings time adjustment is done automatically,
using parameters entered by the user. Power fail and
battery monitors offer user-selectable trip levels. The
time stamp function records the time and date of
switchover from VDD to VBAT power, and also from VBAT
to VDD power.
The ISL12022MA features enhanced immunity to ESD
per the IEC61000-4-2 standard, and also provides
improved resistance to system leakage related to
environmental moisture.
Related Literature
• See TB484 “ISL12022MA Enhanced RTC Module”
• See AN1549 “Addressing Power Issues in Real Time
Clock Applications”
Features
• Embedded 32.768kHz Quartz Crystal in the Package
• 20 Ld SOIC Package (for DFN version, refer to the
ISL12020M)
• Calendar
• On-chip Oscillator Temperature Compensation
• 10-bit Digital Temperature Sensor Output
• 15 Selectable Frequency Outputs
• Interrupt for Alarm or 15 Selectable Frequency
Outputs
• Automatic Backup to Battery or Supercapacitor
• VDD and Battery Status Monitors
• Battery Reseal™ Function to Extend Battery Shelf Life
• Power Status Brownout Monitor
• Time Stamp for Battery Switchover
• 128 Bytes Battery-Backed User SRAM
• I2C-Bus™
• RoHS Compliant
Applications
• Utility Meters
• POS Equipment
• Printers and Copiers
• Digital Cameras
Typical Application Circuit
1 GND
GND 20
2 GND
GND 19
3 GND
4 GND
GND 18
NC 17
3.3V
SCHOTTKY DIODE
BAT54
BATTERY
3.0V
C2
0.1µF
5 NC
6 NC
7 VBAT
8 GND
9 NC
NC 16
NC 15
VDD 14
IRQ/FOUT 13
SCL 12
C1
0.1µF
R1 R2 R3
10k 10k 10k
10 NC
SDA 11
ISL12022MA
VDO
SCL MCU
SDA INTERFACE
GND
IRQ/FOUT
Performance Curve
5 OSCILLATOR ERROR vs TEMPERATURE
4
3
2
1
0 VBAT = 5.5V
-1 VDD = 2.7V
-2
-3 VDD = 3.3V
-4
-5
-40
-20
0 20 40
TEMPERATURE (°C)
60
80
July 9, 2010
FN7575.1
www.DataSheet.in
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
I2C Bus is a registered trademark owned by NXP Semiconductors Netherlands, B.V.
Copyright Intersil Americas Inc. 2010. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.

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ISL12022MA equivalent
ISL12022MA
Absolute Maximum Ratings
Voltage on VDD, VBAT and IRQ/FOUT pins
(Respect to Ground) . . . . . . . . . . . . . . . . . -0.3V to 6.0V
Voltage on SCL and SDA pins
(Respect to Ground) . . . . . . . . . . . . -0.3V to VDD + 0.3V
ESD Rating
Human Body Model (Per JESD22-A114F) . . . . . . . . . . >3kV
Machine Model (Per JESD22-A115B) . . . . . . . . . . . . >300V
Charge Device Model (Per JESD22-C101D) . . . . . . . . 2.2kV
Latch Up (Tested per JESD-78B; Class 2, Level A) . . . . 100mA
Shock Resistance. . . . . . . . . . . . . . . . 5000g, 0.3ms, 1/2 sine
Vibration (Ultrasound cleaning not advised) . . 20g/10-2000Hz,
Thermal Information
Thermal Resistance (Typical)
θJA (°C/W) θJC (°C/W)
20 Lead SOIC (Notes 4, 5) . . . . . . 70
35
Storage Temperature . . . . . . . . . . . . . . . . . -40°C to +85°C
Pb-Free Reflow Profile (Note 6) . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact
product reliability and result in failures not covered by warranty.
NOTES:
4. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief
TB379 for details.
5. For θJC, the “case temp” location is on top of the package and measured in the center of the package between pins 6 and 15.
6. The ISL12022MA Oscillator Initial Accuracy can change after solder reflow attachment. The amount of change will depend on
the reflow temperature and length of exposure. A general rule is to use only one reflow cycle and keep the temperature and
time as short as possible. Changes on the order of ±1ppm to ±3ppm can be expected with typical reflow profiles.
DC Operating Characteristics RTC Test Conditions: VDD = +2.7 to +5.5V, TA = -40°C to +85°C, unless otherwise
stated. Boldface limits apply over the operating temperature range, -40°C to +85°C.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
(Note 7) (Note 8) (Note 7) UNITS NOTES
VDD Main Power Supply
(Note 15)
VBAT
IDD1
IDD2
IDD3
Battery Supply Voltage
Supply Current. (I2C Not Active,
Temperature Conversion Not
Active, FOUT Not Active)
Supply Current. (I2C Active,
Temperature Conversion Not
Active, Fout Not Active)
Supply Current. (I2C Not Active,
Temperature Conversion Active,
FOUT Not Active)
(Note 15)
VDD = 5V
VDD = 3V
VDD = 5V
VDD = 5V
IBAT Battery Supply Current
VDD = 0V, VBAT = 3V,
TA = +25°C
VDD = 0V, VBAT = 3V
IBATLKG Battery Input Leakage
VDD = 5.5V, VBAT = 1.8V
ILI Input Leakage Current on SCL
VIL = 0V, VIH = VDD
ILO I/O Leakage Current on SDA
VIL = 0V, VIH = VDD
VBATM Battery Level Monitor Threshold
VPBM Brownout Level Monitor Threshold
VTRIP VBAT Mode Threshold
(Note 15)
VTRIPHYS VTRIP Hysteresis
VBATHYS VBAT Hysteresis
ΔFoutT Oscillator Stability vs Temperature VDD = 3.3V
ΔFoutV Oscillator Stability vs Voltage
2.7V VDD 5.5V
ΔFoutI Oscillator Initial Accuracy
VDD = 3.3V
2.7
1.8
-1.0
-1.0
-100
-100
2.0
-5
-3
-3
5.5 V
5.5 V 9
4.1 7 µA 10, 11
3.5 6 µA 10, 11
200
500
µA 10, 11
120
400
µA 10, 11
1.0
1.0
±0.1
±0.1
2.2
30
50
1.6 µA
5.0
100
1.0
1.0
+100
+100
2.4
+5
+3
+3
µA
nA
µA
µA
mV
mV
V
mV
mV
ppm
ppm
ppm
10
10
13
13
6
6
www.DataSheet.in
5
FN7575.1
July 9, 2010


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