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What is N04Q16YYC2B?

This electronic component, produced by the manufacturer "NanoAmp Solutions", performs the same function as "4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ".


N04Q16YYC2B Datasheet PDF - NanoAmp Solutions

Part Number N04Q16YYC2B
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ
Manufacturers NanoAmp Solutions 
Logo NanoAmp Solutions Logo 


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NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N04Q16yyC2B
Advance wInwwfo.DramtaShaeetti4oU.ncom
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual
Vcc and VccQ for Ultimate Power Reduction
256K×16 bit POWER SAVER TECHNOLOGY
Overview
Features
The N04Q16yyC2B are ultra-low power memory
devices containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide ultra-low active and standby power. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently. The 4Mb SRAM is
optimized for the ultimate in low power and is
suited for various applications where ultra-low-
power is critical such as medical applications,
battery backup and power sensitive hand-held
devices. The unique page mode operation saves
active operating power and the dual power supply
rails allow very low voltage operation while
maintaining 3V I/O capability. The device can
operate over a very wide temperature range of 0oC
to +70oC for the lowest power and is also available
in the industrial range of -40oC to +85oC. The
devices are available in standard BGA and TSOP
packages. The devices are also available as
Known Good Die (KGD) for embedded package
applications.
Product Options
• Multiple Power Supply Ranges
1.1V - 1.3V
1.65V - 1.95V
2.3V - 2.7V
2.7V - 3.6V
• Dual Vcc / VccQ Power Supplies
1.2V Vcc with 3V VccQ
1.8V Vcc with 3V VccQ
2.5V Vcc with 3V VccQ
• Very low standby current
50nA typical for 1.2V operation
• Very low operating current
400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
80µA typical for 1.2V operation at 1µs
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Automatic power down to standby mode
• BGA, TSOP and KGD options
• RoHS Compliant
Part Number
I/O
Typical
Standby
Current
Vcc
(V)
VccQ
(V)
Speed
Typical
Operating
(nS) Operating Current Temperature
N04Q1612C2Bx-15C
x16
50nA
1.2 1.2, 1.8, 3 150ns 0.4 mA @ 1MHz
N04Q1618C2Bx-15C
N04Q1618C2Bx-70C
x16
x16
50nA
200nA
150ns
1.8 1.8, 2.5, 3
70ns
0.4 mA @ 1MHz
0.6 mA @ 1MHz 0oC to +70oC
N04Q1625C2Bx-15C
x16
800nA 2.5 2.5, 3 150ns 0.6 mA @ 1MHz
N04Q1630C2Bx-70C
x16
800nA
3.0
3.0
70ns 2.2mA @ 1MHz
Stock No. 23451-B 2/06
The specification is ADVANCE INFORMATION and subject to change without notice.
1

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N04Q16YYC2B equivalent
NanoAmp Solutions, Inc.
N04Q16yyC2B
Advance wInwwfo.DramtaShaeetti4oU.ncom
Power Consumption (TA = 0oC - 70oC)
Device PN
N04Q1612C2Bx-
15C
Standby Current2
Read/Write Current3
Isb
Icc
Page Mode Current Iccp
Chip Disabled
VCC = 1.3V, VIN = VCC or 0
Chip Enabled, IOUT = 0
VCC=1.3V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
VCC=1.3V, VIN=VIH or VIL
Speed
1us
150ns
1us
150ns
Typ1
50
0.4
2
80
300
Max
500
0.5
3
100
450
nA
mA
µA
Standby Current
Isb
Chip Disabled
VCC = 1.9V, VIN = VCC or 0V
50 500 nA
N04Q1618C2Bx-
15C
Read/Write Current
Icc
Chip Enabled, IOUT = 0
VCC=1.9V, VIN=VIH or VIL
1us
150ns
0.4
2
0.5
3
mA
Page Mode Current Iccp
Chip Enabled, IOUT = 0
VCC=1.9V, VIN=VIH or VIL
1us
150ns
80
400
100
500
µA
Standby Current
Isb
Chip Disabled
VCC = 1.9V, VIN = VCC or 0
0.2 1.5 µA
N04Q1618C2Bx-
70C
Read/Write Current
Icc
Chip Enabled, IOUT = 0
VCC=1.9V, VIN=VIH or VIL
1us
70ns
0.6
6
0.9
7
mA
Page Mode Current Iccp
Chip Enabled, IOUT = 0
VCC=1.9V, VIN=VIH or VIL
1us
70ns
0.1
0.8
0.2
1
mA
Standby Current
Isb
Chip Disabled
VCC = 2.8V, VIN = VCC or 0
0.8 1.0
µA
N04Q1625C2Bx-
15C
Read/Write Current
Icc
Chip Enabled, IOUT = 0
VCC= 2.8V, VIN=VIH or VIL
1us
150ns
0.6
3
1.0
4
mA
Page Mode Current Iccp
Chip Enabled, IOUT = 0
VCC= 2.8V, VIN=VIH or VIL
1us
150ns
0.1
1.5
0.2
2
mA
Standby Current
Isb
Chip Disabled
VCC = 3.6V, VIN = VCC or 0
0.8 4
µA
N04Q1630C2Bx- Read/Write Current
70C
Icc
Chip Enabled, IOUT = 0
VCC= 3.6V, VIN=VIH or VIL
1us
70ns
2.2
8.5
3
10
mA
Page Mode Current Iccp
Chip Enabled, IOUT = 0
VCC= 3.6V, VIN=VIH or VIL
1us
70ns
0.5
2
0.6
1.5
mA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all
inputs must be within 0.2 volts of either VCC or VSS. This applies to all ISB values.
3. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system. This applies to all Icc and Iccp values.
Stock No. 23451-B 2/06
The specification is ADVANCE INFORMATION and subject to change without notice.
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for N04Q16YYC2B electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
N04Q16YYC2BThe function is 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ. NanoAmp SolutionsNanoAmp Solutions

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