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PDF US5U38 Data sheet ( Hoja de datos )

Número de pieza US5U38
Descripción 2.5V Drive Pch+SBD MOSFET
Fabricantes ROHM Semiconductor 
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No Preview Available ! US5U38 Hoja de datos, Descripción, Manual

Transistor
2.5V Drive Pch+SBD MOSFET
US5U38
www.DataSheet4U.com
US5U38
zStructure
Silicon P-channel MOSFET
Schottky Barrier DIODE
zFeatures
1) The US5U38 combines Pch MOSFET with a
Schottky barrier diode in a TUMT5 package.
2) Low on-resistance with fast switching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
zDimensions (Unit : mm)
TUMT5
2.0
1.3
Abbreviated symbol : U38
zApplications
Switching
zEquivalent circuit
(5)
(4)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
US5U38
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
Pulsed
ID
IDP 1
Source current
(Body diode)
Continuous
Pulsed
IS
ISP 1
Channel temperature
Tch
Power dissipation
PD 3
Limits
20
±12
±1.0
±4.0
0.4
4.0
150
0.7
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
VRM
VR
IF
IFSM 2
Tj
PD 3
25
20
0.7
3.0
150
0.5
<MOSFET AND Di>
Power dissipation
PD 3
1.0
Range of storage temperature
Tstg
55 to +150
1 Pw10µs, Duty cycle1% 2 60Hz1cyc. 3 Mounted on a ceramic board
2
1
(1) (2)
1 ESD protection diode
2 Body diode
Unit
V
V
A
A
A
A
°C
W / ELEMENT
V
V
A
A
°C
W / ELEMENT
W / TOTAL
°C
(1)Gate
(2)Source
(3) (3)Anode
(4)Cathode
(5)Drain
1/5

1 page




US5U38 pdf
Transistor
zMeasurement circuits
VGS
ID
D.U.T.
RG
VDS
RL
VDD
Fig.13 Switching Time Measurement Circuit
VGS
IG(Const)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.15 Gate Charge Measurement Circuit
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US5U38
VGS
10%
50%
Pulse Width
10%
VDS 90%
50%
90%
10%
90%
td(on) tr
ton
td(off)
tf
toff
Fig.14 Switching Waveforms
VG
VGS
Qg
Qgs Qgd
Charge
Fig.16 Gate Charge Waveforms
5/5

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