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PDF BC488B Data sheet ( Hoja de datos )
| Número de pieza | BC488B | |
| Descripción | High Current Transistors PNP Silicon | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BC488B (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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BC488B
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High Current Transistors
PNP Silicon
Features
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector - Emitter Voltage
Collector - Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
−60
−60
−4.0
−1.0
625
5.0
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
200 °C/W
Thermal Resistance,
Junction−to−Case
RqJC
83.3 °C/W
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
1
23
TO−92
CASE 29
STYLE 17
MARKING DIAGRAM
BC
488B
AYWW G
G
BC488B = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 1
1
ORDERING INFORMATION
Device
Package
Shipping†
BC488BRL1
TO−92 2000/Tape & Reel
BC488BRL1G
TO−92 2000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BC488B/D
1 page  
−1.0
TJ = 25°C
−0.8
VBE(sat) @ IC/IB = 10
−0.6
VBE(on) @ VCE = −1.0 V
−0.4
BC488B
−1.0
−0.8
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TJ = 25°C
−0.6
IC = −10 mA
−50
mA
−100 mA
−250 mA −500 mA
−0.4
−0.2
VCE(sat) @ IC/IB = 10
0
−0.5 −1.0 −2.0 −5.0 −10 −20
−50 −100 −200
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
−500
−0.2
0
−0.05 −0.1 −0.2
−0.5 −1.0 −2.0 −5.0
IB, BASE CURRENT (mA)
−10 −20
Figure 12. Collector Saturation Region
−50
−0.8
−1.2
−1.6
−2.0 RqVB for VBE
−2.4
−2.8
−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200
IC, COLLECTOR CURRENT (mA)
−500
Figure 13. Base−Emitter Temperature Coefficient
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BC488B.PDF ] | |
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