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Datasheet DIM1200NSM17-E000 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | DIM1200NSM17-E000 | Single Switch IGBT Module DIM1200NSM17-E000
DIM1200NSM17-E000
Single Switch IGBT Module
Replaces June 2004 version, issue PDS5644-2.0 PDS5644-3.0 July 2004
FEATURES
I I I I I I
Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand Isolated MMC Base w | Dynex Semiconductor | igbt |
DIM Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | DIM100 | SIMM/DIMM SOCKET
DataSheet4U.com
DataShee
DataSheet4U.com
DataSheet 4 U .com
DIM100
AUK Contractors data | | |
2 | DIM100PHM33-A000 | IGBT Power Module
DIM100PHM33-A000
DIM100PHM33-A000
Half Bridge IGBT Module
PDS5708-1.3 January 2004
FEATURES
I I I I
KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) 3300V 3.4V 100A 200A
10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolate Dynex Semiconductor igbt | | |
3 | DIM100PHM33-F000 | IGBT Power Module
DIM100PHM33-F000
DIM100PHM33-F000
Half Bridge IGBT Module
PDS5764-1.1 April 2004
FEATURES
I I I I
KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) 3300V 2.8V 100A 200A
Soft Punch Through Silicon 10µs Short Circuit Withstand Isolated MMC Base with AlN Substrates Hi Dynex Semiconductor igbt | | |
4 | DIM100WHS12-A000 | IGBT Power Module
DIM100WHS12-A000
DIM100WHS12-A000
Half Bridge IGBT Module
Replaces February 2004 version, issue DS5735-1.0 DS5735-2.0 May 2004
FEATURES
I I I
10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate
KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) Dynex Semiconductor igbt | | |
5 | DIM100WHS12-E000 | IGBT Power Module
DIM100WHS12-E000
DIM100WHS12-E000
Half Bridge IGBT Module
PDS5710-1.1 January 2004
FEATURES
I I I I
Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1200V 1.7V Dynex Semiconductor igbt | | |
6 | DIM100WHS17-A000 | IGBT Power Module
DIM100WHS17-A000
DIM100WHS17-A000
Half Bridge IGBT Module
PDS5715-1.1 Febuary 2004
FEATURES
I I I
10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base Plate
KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK)
1700V 2.7V 100A 200A
*(measured a Dynex Semiconductor igbt | | |
7 | DIM100WHS17-E000 | IGBT Power Module
DIM100WHS17-E000
DIM100WHS17-E000
Half Bridge IGBT Module
PDS5719-1.2 February 2004
FEATURES
I I I I
Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1700V 2.0 Dynex Semiconductor igbt | |
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Número de pieza | Descripción | Fabricantes | |
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