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PDF 74AUP1GU04 Data sheet ( Hoja de datos )
| Número de pieza | 74AUP1GU04 | |
| Descripción | Low-power unbuffered inverter | |
| Fabricantes | NXP Semiconductors | |
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74AUP1GU04
Low-power unbuffered inverter
Rev. 01 — 10 August 2005
www.DataSheet4U.com
Product data sheet
1. General description
The 74AUP1GU04 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible families.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
The 74AUP1GU04 provides the single unbuffered inverting gate.
2. Features
s Wide supply voltage range from 0.8 V to 3.6 V
s High noise immunity
s ESD protection:
x HBM JESD22-A114-C exceeds 2000 V
x MM JESD22-A115-A exceeds 200 V
x CDM JESD22-C101-C exceeds 1000 V
s Low static power consumption; ICC = 0.9 µA (maximum)
s Latch-up performance exceeds 100 mA per JESD 78 Class II
s Inputs accept voltages up to 3.6 V
s Multiple package options
s Specified from −40 °C to +85 °C and −40 °C to +125 °C
1 page  
Philips Semiconductors
74AUP1GU04www.DataSheet4U.com
Low-power unbuffered inverter
9. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground = 0 V).
Symbol Parameter
Conditions
Min Max Unit
VCC supply voltage
IIK input clamping
current
VI < 0 V
−0.5 +4.6 V
- −50 mA
VI input voltage
IOK
output clamping
VO > VCC or VO < 0 V
current
[1] −0.5
-
+4.6
±50
V
mA
VO output voltage
IO
output current
VO = 0 V to VCC
ICC quiescent supply
current
[1] −0.5
-
-
VCC + 0.5 V
±20 mA
+50 mA
IGND
Tstg
Ptot
ground current
storage temperature
total power
dissipation
Tamb = −40 °C to +125 °C
-
−65
[2] -
−50
+150
250
mA
°C
mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For TSSOP5 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 packages: above 45 °C the value of Ptot derates linearly with 2.4 mW/K.
10. Recommended operating conditions
Table 7:
Symbol
VCC
VI
VO
Tamb
tr, tf
Recommended operating conditions
Parameter
Conditions
supply voltage
input voltage
output voltage
ambient temperature
input rise and fall times VCC = 0.8 V to 3.6 V
Min Max Unit
0.8 3.6 V
0 3.6 V
0 VCC V
−40 +125 °C
0 200 ns/V
9397 750 14689
Product data sheet
Rev. 01 — 10 August 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 18
5 Page 
Philips Semiconductors
74AUP1GU04www.DataSheet4U.com
Low-power unbuffered inverter
VCC
VEXT
PULSE
GENERATOR
VI
DUT
VO
5 kΩ
RT CL RL
001aac521
Fig 7.
Test data is given in Table 12.
Definitions for test circuit:
RL = Load resistor
CL = Load capacitance including jig and probe capacitance
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator
Load circuitry for switching times
Table 12: Test data
Supply voltage
VCC
0.8 V to 3.6 V
Load
CL
5 pF, 10 pF,
15 pF and 30 pF
VEXT
RL [1]
tPLH, tPHL
5 kΩ or 1 MΩ open
tPZH, tPHZ
GND
tPZL, tPLZ
2 × VCC
[1] For measuring enable and disable times RL = 5 kΩ, for measuring propagation delays, setup and hold times
and pulse width RL = 1 MΩ.
9397 750 14689
Product data sheet
Rev. 01 — 10 August 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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