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PDF GPTP5125 Data sheet ( Hoja de datos )
| Número de pieza | GPTP5125 | |
| Descripción | PHASE CONTROLLED SCR | |
| Fabricantes | Green Power Solutions srl | |
| Logotipo |  |
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Green Power Solutions srl
Via Greto di Cornigliano 6R - 16152 Genova , Italy
Phone: +39-010-659 1869
Fax: +39-010-659 1870
www.DWateabS:hewewtw4U.g.pcsoemmi.it
E-mail: [email protected]
GPTP5125
PHASE CONTROLLED SCR
High reliability operation
DC power supply
AC drives
VOLTAGE UP TO
AVERAGE CURRENT
SURGE CURRENT
BLOCKING CHARACTERISTICS
Characteristic
VRRM
Repetitive peak reverse voltage
VRSM
Non-repetitive peak reverse voltage
VDRM
Repetitive peak off-state voltage
IDRM
IRRM
Repetitive peak off-state current, max.
Repetitive peak reverse current, max.
Conditions
VDRM, single phase, half wave, Tj = Tjmax
VRRM, single phase, half wave, Tj = Tjmax
ON-STATE CHARACTERISTICS
IT(AV)
IT(RMS)
ITSM
I²t
VT(TO)
rT
VTM
IH
IL
Average on-state current
R.M.S. on-state current
Surge on-state current
I² t for fusing coordination
Threshold voltage
On-state slope resistance
Peak on-state voltage, max
Holding current, max
Latching current, typ
Sine wave,180° conduction, Th = 55 °C
Sine wave,180° conduction, Th = 55 °C
Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax
Tj = Tjmax
Tj = Tjmax
On-state current IT = 2000 A , Tj = Tjmax
Tj = 25 °C
Tj = 25 °C
TRIGGERING CHARACTERISTICS
VGT Gate trigger voltage
IGT Gate trigger current
VGD Non-trigger voltage
PGM Peak gate power dissipation
PG(AV)
Average gate power dissipation
IFGM
Peak gate current
VFGM
VRGM
Peak gate voltage (forward)
Peak gate voltage (reverse)
Tj = 25 °C, VD = 5 V
Tj = 25 °C, VD = 5 V
VD = 67% VRRM, Tj = Tjmax
Pulse width 1 ms
SWITCHING CHARACTERISTICS
di/dt
dV/dt
tq
Critical rate of rise of on-state current
Critical rate of rise of off-state voltage
Turn-off time, typ
Non rep. - Tj = Tjmax
Tj = Tjmax
Tj = Tjmax, IT = 2000 A, di/dt = -5 A/µs
VR = 200 V, VD = 67% VDRM, dV/dt = 20 V/µs
THERMAL AND MECHANICAL CHARACTERISTICS
Rth(j-c)
Rth(c-h)
Tjmax
Tstg
F
Thermal resistance (junction to case)
Thermal resistance (case to heatsink)
Max operating junction temperature
Storage temperature
Clamping force ± 5%
Mass
Double side cooled
Double side cooled
Document GPTP5125T001
4200 V
1250 A
15 kA
Value
4200 V
4300 V
4300 V
200 mA
200 mA
1250
1963
15
1125
0,90
0,565
2,03
80
500
A
A
kA
kA²s
V
mΩ
V
mA
mA
3V
400 mA
0,3 V
20 W
3W
10 A
12 V
10 V
1000
1000
600
A/µs
V/µs
µs
0,017
0,004
125
-40 / 140
22
600
°C/W
°C/W
°C
°C
kN
g
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GPTP5125.PDF ] | |
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