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Datasheet RJH60D5DPK Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RJH60D5DPK | Silicon N Channel IGBT RJH60D5DPK
Silicon N Channel IGBT Application: Inverter
Features
• High breakdown-voltage • Low on-voltage • Built-in diode
Preliminary
REJ03G1846-0100 Rev.1.00 Oct 14, 2009
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
C
G
1. Gate 2. Collector 3. E |  Renesas Technology | igbt |
RJH Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RJH1BF6RDPQ-80 | High Speed Power Switching Preliminary Datasheet
RJH1BF6RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.7 V  Renesas data | | |
| 2 | RJH1BF7RDPQ-80 | High Speed Power Switching Preliminary Datasheet
RJH1BF7RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V Renesas data | | |
| 3 | RJH1CD5DPQ-A0 | High Speed Power Switching Preliminary Datasheet
RJH1CD5DPQ-A0
1200 V - 15 A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (trr = 100 ns typ.) in Renesas data | | |
| 4 | RJH1CD5DPQ-E0 | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJH1CD5DPQ-E0
1200V - 20A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr = 200 ns typ.) in o Renesas igbt | | |
| 5 | RJH1CD6DPQ-A0 | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJH1CD6DPQ-A0
1200 V - 20 A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (trr = 100 ns typ.) in Renesas igbt | | |
| 6 | RJH1CD6DPQ-E0 | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJH1CD6DPQ-E0
1200V - 25A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr = 200 ns typ.) in o Renesas igbt | | |
| 7 | RJH1CD7DPQ-A0 | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJH1CD7DPQ-A0
1200 V - 25 A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (trr = 100 ns typ.) in Renesas igbt | |
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