|
|
Datasheet RJH60D2DPE Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | RJH60D2DPE | Silicon N Channel IGBT RJH60D2DPE
Silicon N Channel IGBT Application: Inverter
Features
• High breakdown-voltage • Low on-voltage • Built-in diode
Preliminary
REJ03G1842-0100 Rev.1.00 Oct 14, 2009
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
C 4
G 1 2 3 E
1. Gat | Renesas Technology | igbt |
RJH Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RJH1BF6RDPQ-80 | High Speed Power Switching Preliminary Datasheet
RJH1BF6RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.7 V Renesas data | | |
2 | RJH1BF7RDPQ-80 | High Speed Power Switching Preliminary Datasheet
RJH1BF7RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V Renesas data | | |
3 | RJH1CD5DPQ-A0 | High Speed Power Switching Preliminary Datasheet
RJH1CD5DPQ-A0
1200 V - 15 A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (trr = 100 ns typ.) in Renesas data | | |
4 | RJH1CD5DPQ-E0 | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJH1CD5DPQ-E0
1200V - 20A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr = 200 ns typ.) in o Renesas igbt | | |
5 | RJH1CD6DPQ-A0 | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJH1CD6DPQ-A0
1200 V - 20 A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (trr = 100 ns typ.) in Renesas igbt | | |
6 | RJH1CD6DPQ-E0 | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJH1CD6DPQ-E0
1200V - 25A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr = 200 ns typ.) in o Renesas igbt | | |
7 | RJH1CD7DPQ-A0 | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJH1CD7DPQ-A0
1200 V - 25 A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (trr = 100 ns typ.) in Renesas igbt | | |
8 | RJH1CD7DPQ-E0 | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJH1CD7DPQ-E0
1200V - 30A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr = 200 ns typ.) in o Renesas igbt | | |
9 | RJH1CF4RDPQ-80 | High Speed Power Switching Preliminary Datasheet
RJH1CF4RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 Renesas data | |
Esta página es del resultado de búsqueda del RJH60D2DPE. Si pulsa el resultado de búsqueda de RJH60D2DPE se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |