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PDF 2SK2887 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2887 | |
| Descripción | N-Channel Silicon MOSFET | |
| Fabricantes | Guangdong Kexin Industrial | |
| Logotipo |  |
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SMD Type
N-Channel Silicon MOSFET
2SK2887
MOSFICET
Features
Low on-resistance.
Fast switching speed.
Wide SOA (safe operating area).
Gate-source voltage (VGSS) guaranteed to be 30V.
Easily designed drive circuits.
Easy to parallel.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
www.Data*SPhWeet41U0.coms,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
Rating
200
30
3
12
20
150
-55 to +150
Unit
V
V
A
A
W
1 Gate
2 Drain
3 Source
Symbol
VDSS
IDSS
IGSS
VGS(th)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
trr
Qrr
Testconditons
ID=1mA,VGS=0
VDS=200V,VGS=0
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=1.5A
VGS=10V,ID=1.5A
VDS=10V,VGS=0,f=1MHZ
ID=1.5A,VGS(on)=10V,RL=68 ,RG=10
,VDD=100V
IDR=3A,VGS=0V,di/dt=100A/ s
Min Typ Max Unit
200 V
100 A
100 nA
2.0 4.0 V
0.6 1.5
S
0.7 0.9
230 pF
100 pF
35 pF
10 ns
12 ns
26 ns
34 ns
96 ns
0.56 c
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SK2887.PDF ] | |
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