(PDF) SPP4435B Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	SPP4435B
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPP4435B P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4435B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES -30V/-9.2A,RDS(ON)= 24mΩ@VGS=- 10V -30V/-7.0A,RDS(ON)= 30mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design PIN CONFIGURATION(SOP – 8P) www.DataSheet4U.com PART MARKING 2008/12/26 Ver.1 Page 1 1 page SPP4435B P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS www.DataSheet4U.com 2008/12/26 Ver.1 Page 5 5 Page

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PDF SPP4435B Data sheet ( Hoja de datos )