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PDF 2SD1713 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1713 | |
| Descripción | Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD1713
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SB1158
APPLICATIONS
·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
120 V
VCEO
Collector-Emitter Voltage
120 V
wwwVEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
6A
ICP Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ Junction Temperature
10 A
70
W
3
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1713.PDF ] | |
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