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PDF 40T03GP Data sheet ( Hoja de datos )

Número de pieza 40T03GP
Descripción AP40T03GP
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! 40T03GP Hoja de datos, Descripción, Manual

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Advanced Power
Electronics Corp.
AP40T03GS/P
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low Gate Charge
Fast Switching
RoHS Compliant
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
30V
25mΩ
28A
GD
S TO-263(S)
The TO-25623 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP40T03JG)Pa)rearaevaavilaiblaleblfeorfolor wlo-wpr-opfriolefilaepapplipcalictiaotniosn. s.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=100
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
Rating
30
±25
28
24
95
31.25
0.25
-55 to 150
-55 to 150
TO-220(P)
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
4.0
62
Units
/W
/W
Data and specifications subject to change without notice
200331053-1/4

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