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What is 74AUP1G06?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "Low-power inverter".


74AUP1G06 Datasheet PDF - NXP Semiconductors

Part Number 74AUP1G06
Description Low-power inverter
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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74AUP1G06
Low-power inverter with open-drain output
Rev. 02 — 24 August 2006
Product data sheet
1. General description
The 74AUP1G06 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using IOFF.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP1G06 provides the single inverting buffer with open-drain output. The output of
the device is an open drain and can be connected to other open-drain outputs to
implement active-LOW wired-OR or active-HIGH wired-AND functions.
2. Features
s Wide supply voltage range from 0.8 V to 3.6 V
s High noise immunity
s Complies with JEDEC standards:
x JESD8-12 (0.8 V to 1.3 V)
x JESD8-11 (0.9 V to 1.65 V)
x JESD8-7 (1.2 V to 1.95 V)
x JESD8-5 (1.8 V to 2.7 V)
x JESD8-B (2.7 V to 3.6 V)
s ESD protection:
x HBM JESD22-A114-D Class 3A exceeds 5000 V
x MM JESD22-A115-A exceeds 200 V
x CDM JESD22-C101-C exceeds 1000 V
s Low static power consumption; ICC = 0.9 µA (maximum)
s Latch-up performance exceeds 100 mA per JESD 78 Class II
s Inputs accept voltages up to 3.6 V
s Low noise overshoot and undershoot < 10 % of VCC
s IOFF circuitry provides partial Power-down mode operation
s Multiple package options
s Specified from 40 °C to +85 °C and 40 °C to +125 °C

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74AUP1G06 equivalent
www.DPahtaSilhiepest4US.ceommiconductors
74AUP1G06
Low-power inverter with open-drain output
10. Static characteristics
Table 7. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min Typ
Tamb = 25 °C
VIH HIGH-level input voltage
VCC = 0.8 V
VCC = 0.9 V to 1.95 V
0.70 × VCC -
0.65 × VCC -
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
1.6 -
2.0 -
VIL LOW-level input voltage VCC = 0.8 V
VCC = 0.9 V to 1.95 V
--
--
VCC = 2.3 V to 2.7 V
--
VCC = 3.0 V to 3.6 V
--
VOL LOW-level output voltage VI = VIH or VIL
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
IO = 1.1 mA; VCC = 1.1 V
--
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
--
--
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
--
--
IO = 2.7 mA; VCC = 3.0 V
--
IO = 4.0 mA; VCC = 3.0 V
--
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
IOFF
IOFF
power-off leakage current
additional power-off
leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
-
-
-
-
ICC
ICC
supply current
additional supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
VI = VCC 0.6 V; IO = 0 A; VCC = 3.3 V
-
-
-
-
CI input capacitance
VCC = 0 V to 3.6 V; VI = GND or VCC
-
0.8
CO output capacitance
output enabled; VO = GND; VCC = 0 V
-
1.7
Tamb = 40 °C to +85 °C
VIH HIGH-level input voltage
output disabled; VO = GND; VCC = 0 V
VCC = 0.8 V
VCC = 0.9 V to 1.95 V
- 1.1
0.70 × VCC -
0.65 × VCC -
VCC = 2.3 V to 2.7 V
1.6 -
VCC = 3.0 V to 3.6 V
2.0 -
VIL LOW-level input voltage VCC = 0.8 V
--
VCC = 0.9 V to 1.95 V
--
VCC = 2.3 V to 2.7 V
--
VCC = 3.0 V to 3.6 V
--
Max Unit
-V
-V
-V
-V
0.30 × VCC V
0.35 × VCC V
0.7 V
0.9 V
0.1
0.3 × VCC
0.31
0.31
0.31
0.44
0.31
0.44
±0.1
±0.2
±0.2
V
V
V
V
V
V
V
V
µA
µA
µA
0.5 µA
40 µA
- pF
- pF
- pF
-V
-V
-V
-V
0.30 × VCC V
0.35 × VCC V
0.7 V
0.9 V
74AUP1G06_2
Product data sheet
Rev. 02 — 24 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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