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PDF STP140N10F4 Data sheet ( Hoja de datos )

Número de pieza STP140N10F4
Descripción Power MOSFET ( Transistor )
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! STP140N10F4 Hoja de datos, Descripción, Manual

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STB140N10F4, STF140N10F4
STP140N10F4
N-channel 100 V, 5.2 m, 60 A TO-220, D2PAK, TO-220FP
STripFET™ DeepGATE™ Power MOSFET
Preliminary Data
Features
Type
STB140N10F4
STF140N10F4
STP140N10F4
VDSS
100 V
100 V
100 V
RDS(on) max
< 6.5 m
< 6.5 m
< 6.5 m
ID
140 A
55 A
140 A
Exceptional dv/dt capability
Extremely low on-resistance RDS(on)
100% avalanche tested
Application
Switching applications
Description
This Power MOSFET is among the latest
developments that use an advanced technology
(STripFET™ DeepGATE™ technology), which
has been especially tailored to minimize on-state
resistance, provide superior switching
performance and withstand high energy pulse in
avalanche and commutation mode. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
3
2
1
TO-220FP
3
2
1
TO-220
3
1
D²PAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB140N10F4
STF140N10F4
STP140N10F4
Marking
140N10F4
140N10F4
140N10F4
Package
D²PAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
January 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/13
www.st.com
13

1 page




STP140N10F4 pdf
www.DataSShTeeBt41U4.0coNm10F4, STF140N10F4, STP140N10F4
Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter
Test conditions Min. Typ. Max Unit
ISD Source-drain current
TO-220,
DPAK
TO-220FP
ISDM (1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
(pulsed)
Forward on voltage
TO-220,
DPAK
TO-220FP
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 60 A, VGS = 0
ISD = 60 A, VDD = 25 V
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 4)
140 A
55 A
560 A
220 A
TBD V
TBD
TBD
TBD
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
5/13

5 Page





STP140N10F4 arduino
www.DataSShTeeBt41U4.0coNm10F4, STF140N10F4, STP140N10F4
5 Packaging mechanical data
D 2PAK FOOTPRINT
Packaging mechanical data
TAPE AND REEL SHIPMENT
TAPE MECHANICAL DATA
DIM.
A0
B0
D
D1
E
F
K0
P0
P1
P2
R
T
W
mm inch
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
1.5 1.6 0.059 0.063
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
11.4 11.6 0.449 0.456
4.8 5.0 0.189 0.197
3.9 4.1 0.153 0.161
11.9 12.1 0.468 0.476
1.9 2.1 0.075 0.082
50 1.574
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
REEL MECHANICAL DATA
DIM.
A
B
C
D
G
N
T
mm inch
MIN. MAX. MIN. MAX.
330 12.992
1.5 0.059
12.8 13.2 0.504 0.520
20.2 0795
24.4 26.4 0.960 1.039
100 3.937
30.4 1.197
BASE QTY
1000
BULK QTY
1000
11/13

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