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What is STD10NM60N?

This electronic component, produced by the manufacturer "ST Microelectronics", performs the same function as "Power MOSFETs".


STD10NM60N Datasheet PDF - ST Microelectronics

Part Number STD10NM60N
Description Power MOSFETs
Manufacturers ST Microelectronics 
Logo ST Microelectronics Logo 


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STD10NM60N, STF10NM60N,
STP10NM60N, STU10NM60N
N-channel 600 V, 0.53 typ., 10 A MDmesh™ II Power MOSFET
in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet - production data
7$%


DPAK
7$%



TO-220



TO-220FP
7$%
IPAK



Features
Order code
VDS @TJ
max.
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
650 V
RDS(on)
max.
0.55
ID PTOT
10 A
70 W
25 W
70 W
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Figure 1. Internal schematic diagram
Applications
' 7$%
Switching applications
Description
* 
6 
Order code
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
$0Y
Table 1. Device summary
Marking
Package
Packing
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
10NM60N
10NM60N
10NM60N
10NM60N
DPAK
TO-220FP
TO-220
IPAK
Tape and reel
Tube
Tube
Tube
December 2015
This is information on a product in full production.
DocID028726 Rev 1
1/28
www.st.com

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STD10NM60N equivalent
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 300 V, ID = 4 A,
RG = 4.7 , VGS = 10 V
(see Figure 16)
Min. Typ. Max. Unit
- 10 - ns
- 12 - ns
- 32 - ns
- 15 - ns
Table 8. Source-drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 8 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 18)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 18)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
-8
A
32
- 1.3 V
- 250
ns
- 2.12
µC
17 A
- 315
ns
2.6 µC
16.5 A
DocID028726 Rev 1
5/28
28


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STD10NM60N electronic component.


Information Total 28 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
STD10NM60NThe function is Power MOSFETs. ST MicroelectronicsST Microelectronics

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