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PDF GT40Q323 Data sheet ( Hoja de datos )
| Número de pieza | GT40Q323 | |
| Descripción | Silicon N Channel IGBT / Voltage Resonance Inverter Switching Application | |
| Fabricantes | Toshiba Semiconductor | |
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Hay una vista previa y un enlace de descarga de GT40Q323 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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GT40Q323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40Q323
Voltage Resonance Inverter Switching Application
www.datasheet4u.com
• Enhancement-mode
• High speed: tf = 0.14 μs (typ.) (IC = 40A)
• FRD included between emitter and collector
• 4th generation
• TO-3P (N) (Toshiba package name)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Continuous collector
current
@ Tc = 100°C
@ Tc = 25°C
Pulsed collector current
DC
Diode forward current
Pulsed
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
1200
±25
20
39
80
10
80
80
200
150
−55 to 150
V
V
A
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
Rth (j-c)
Rth (j-c)
Max
0.625
1.79
Unit
°C/W
°C/W
Equivalent Circuit
Collector
Gate
Emitter
1
2006-11-01
1 page  
GT40Q323
www.datasheet4u.com
101
Tc = 25°C
100
10−1
Rth (t) – tw
Diode stage
IGBT stage
10−2
10−3
10−5
10−4
10−3
10−2
10−1
100
101
102
Pulse width tw (s)
IC max – Tc
40
Common emitter
VGE = 15 V
30
20
10
0
25 50 75 100 125 150
Case temperature Tc (°C)
80
Common collector
VGE = 0
60
IF – VF
−40
25
Tc = 125°C
40
20
10
01234
Forward voltage VF (V)
trr, lrr – IF
0.8 8
0.6
lrr
0.4
trr
6
4
0.2 2
Common collector
di/dt = −20 A/μs
Tc = 25°C
0.0 0
0 10 20 30 40 50
Forward current IF (A)
0.5
0.4
trr
0.3
trr, lrr – di/dt
Common collector
IF = 10 A
Tc = 25 °C
40
32
24
0.2 16
0.1
lrr
0.0
0
40
8
0
80 120 160 200 240
di/dt (A/µs)
5 2006-11-01
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT40Q323.PDF ] | |
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